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首页> 外文期刊>Journal of Materials Research >Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO_3 thin films in the microwave range
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Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO_3 thin films in the microwave range

机译：微波范围内结晶度对溅射沉积（Ba，Sr）TiO_3薄膜介电损耗的影响

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摘要

The crystallinity dependence of the microwave dielectric losses in (Ba,Sr)TiO_3 thin films was investigated. The sputter-deposition temperatures were altered to vary the level of thin-film crystallinity on a Pt/Si substrate. The dielectric losses (tan 8) were measured up to 6 GHz without parasitic (stray) effects by using a circular-patch capacitor geometry and an equivalent-circuit model. The microwave dielectric losses increased from 0.0024 +- 0.0018 to 0.0102 +- 0.0017 with increasing crystallinity. These deteriorated dielectric losses showed a good correlation with the symmetry-breaking defects, as confirmed by Raman spectra at approximately 760 cm~(-1), inducing microscopic polar regions above the Curie temperature of the bulk (Ba_(0.43)Sr_(0.57))TiO_3.
机译：研究了（Ba，Sr）TiO_3薄膜中微波介电损耗的结晶度依赖性。改变溅射沉积温度以改变Pt / Si衬底上的薄膜结晶度水平。通过使用圆形贴片电容器的几何形状和等效电路模型，可以测量高达6 GHz的介质损耗（tan 8），而没有寄生（杂散）效应。随着结晶度的增加，微波介电损耗从0.0024±0.0018增加到0.0102±0.0017。这些恶化的介电损耗与对称破坏缺陷表现出良好的相关性，如在约760 cm〜（-1）处的拉曼光谱所证实的，从而诱发了大块居里温度以上的微观极性区域（Ba_（0.43）S​​r_（0.57） ）TiO_3。

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