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Synthesis and structural characterization of rutile SnO_2 nanocrystals

机译：金红石型SnO_2纳米晶体的合成与结构表征

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摘要

Nanocrystalline tin dioxide (SnO_2) thin films were prepared on glass substrate by pulse laser deposition for the first time. The thin films were characterized for their composition, morphology, and crystalline structure by x-ray diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy. It was found that the thin films consisted only of the tetragonal phase SnO_2 with no structural change, and they were well crystallized during deposition. In most cases, SnO_2 particles were overlapped, predominantly grown on preferred (101) plane, and connected with two or three neighbors through necks. The average grain size of the as-prepared thin films was about 12 nm. These facts are of great importance for sensor characteristics, since smaller grains and preferred orientation properties provide higher gas sensitivity to the whole thin films. Our findings indicate that the n-type wide-band-gas semiconductor nanocrystalline thin films can be manipulated by using pulse laser deposition techniques, offering new opportunities to control material fabrication.
机译：首次通过脉冲激光沉积法在玻璃基板上制备了纳米二氧化锡（SnO_2）薄膜。通过X射线衍射，透射电子显微镜和高分辨率透射电子显微镜对薄膜的组成，形态和晶体结构进行表征。发现该薄膜仅由四方相SnO_2组成，没有结构变化，并且它们在沉积过程中充分结晶。在大多数情况下，SnO_2颗粒是重叠的，主要在首选（101）平面上生长，并通过颈部与两个或三个邻居相连。所制备的薄膜的平均晶粒尺寸为约12nm。这些事实对于传感器特性非常重要，因为较小的晶粒和较好的取向特性为整个薄膜提供了更高的气体敏感性。我们的发现表明，可以通过使用脉冲激光沉积技术来操纵n型宽带气体半导体纳米晶体薄膜，从而提供了控制材料制造的新机会。

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  • 来源
    《Journal of Materials Research》 |2003年第6期|p.1289-1292|共4页
  • 作者

    Zhiwen Chen; J.K.L. Lai; C.H. Shek; Haydn Chen;

  • 作者单位

    Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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