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首页> 外文期刊>Journal of Materials Research >Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor
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Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

机译：用于非晶硅薄膜晶体管的Ag（Mg）栅电极的粘合，钝化和电阻率

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摘要

The effect of Mg in Ag(Mg)/SiO_2/Si multilayers on the adhesion, passivation, and resistivity following vacuum annealing at 200-500 ℃ has been investigated. The annealing of Ag(Mg)/SiO_2/Si multilayers produced surface and interfacial MgO layers, resulting in a MgO/Ag/MgO/SiO_2/Si structure. The formation of a surface MgO/Ag bilayer structure provided excellent passivation against air and CF_4 plasma chemistry. In addition, the adhesion of Ag to SiO_2 was improved due to the formation of an interfacial MgO layer resulting from the reaction of segregated Mg with SiO_2. However, the negligible solubility of Si in Ag prevented the dissolution of free silicon into the Ag(Mg) film produced from the reaction Mg + SiO_2 = MgO + free Si, which in turn limited the reaction between Mg and SiO_2, which led to a decrease in the adhesion of Ag to SiO_2 at the higher temperature. The use of an O_2 plasma prior to Ag(Mg) alloy deposition on SiO_2 produced an oxygen-rich surface on the SiO_2 which allowed for the enhanced reaction of the segregated Mg and SiO_2 at the surface, thus resulting in markedly increased adhesion properties.
机译：研究了镁在Ag（Mg）/ SiO_2 / Si多层膜中对200-500℃真空退火后的附着，钝化和电阻率的影响。 Ag（Mg）/ SiO_2 / Si多层膜的退火产生了表面和界面的MgO层，从而形成了MgO / Ag / MgO / SiO_2 / Si结构。 MgO / Ag双层表面结构的形成提供了对空气和CF_4等离子体化学的优异钝化作用。另外，由于分离的Mg与SiO_2的反应形成界面MgO层，从而提高了Ag对SiO_2的粘附性。但是，Si在Ag中的溶解度可忽略不计，阻止了游离硅溶解到反应Mg + SiO_2 = MgO +游离Si产生的Ag（Mg）膜中，从而限制了Mg和SiO_2之间的反应，从而导致高温下，Ag与SiO_2的附着力降低。在将Ag（Mg）合金沉积在SiO_2上之前使用O_2等离子体会在SiO_2上产生一个富氧表面，这使表面上分离的Mg和SiO_2的反应增强，从而显着提高了粘合性能。

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