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首页> 外文期刊>Journal of Materials Research >Deposition and characterization of YBa2Cu3O7-delta/LaMnO3/MgO/TiN heterostructures on Cu metal substrates for development of coated conductors
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Deposition and characterization of YBa2Cu3O7-delta/LaMnO3/MgO/TiN heterostructures on Cu metal substrates for development of coated conductors

机译：铜金属基底上YBa2Cu3O7-δ/ LaMnO3 / MgO / TiN异质结构的沉积和表征，用于开发涂覆导体

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In this paper a novel buffer layer architecture consisting of LaMnO3/MgO/TiN is proposed as a suitable structural and chemical template for the epitaxial growth of high-transition temperature (T-c) superconductors on Cu metal surfaces. Using techniques such as high-energy electron diffraction and scanning transmission electron microscopy, we present in situ and ex situ analyses of the buffer-layer and superconductor growth with focus on structural properties of the interfaces formed. While MgO is a good barrier to oxygen diffusion, we find that MgO alone is not a suitable buffer layer due to rapid Cu diffusion. Further, growth of MgO with a single epitaxy can be hindered by the presence of impurities such as S, which form strongly bonded superstructures on the metal surface. With the addition of a TiN layer as a barrier to Cu diffusion, oxide formation is suppressed, interfaces are clean, and a single cube-on-cube epitaxy is observed. While the Cu/TiN and TiN/MgO interfaces are rough, the MgO and LaMnO3 layers planarize the material, leading to growth of smooth YBa2CU3O7-delta (YBCO). Residual strain in the YBCO film is 0.25% or less and does not lead to apparent cracking. The superconducting properties of the samples were investigated by electrical transport and magnetization measurements. For the first time, high critical current density (J(c)) values are reported for YBCO films grown on (001) single-crystal and {100}<100> textured Cu surfaces without intervening metal coatings. Jc on single crystal-like substrates is as high as 3.5 MA/cm(2). Reduced J(c) of approximately 1 MA/cm(2) on rolled Cu tapes is limited by damage to the tape surface during the rolling process. [References: 39]
机译：在本文中，提出了一种由LaMnO3 / MgO / TiN组成的新型缓冲层体系结构，作为高转变温度（T-c）超导体在Cu金属表面上外延生长的合适结构和化学模板。使用高能电子衍射和扫描透射电子显微镜等技术，我们对缓冲层和超导体生长进行原位和非原位分析，重点是形成的界面的结构特性。虽然MgO是阻止氧扩散的良好屏障，但我们发现由于Cu的快速扩散，仅MgO并不是合适的缓冲层。此外，可以通过存在诸如S之类的杂质来阻碍具有单个外延的MgO的生长，所述杂质在金属表面上形成牢固结合的上部结构。通过添加TiN层作为对Cu扩散的阻挡层，可以抑制氧化物的形成，界面的清洁，并且可以观察到单个立方对立方外延。当Cu / TiN和TiN / MgO界面粗糙时，MgO和LaMnO3层使材料平面化，从而导致光滑的YBa2CU3O7-δ（YBCO）增长。 YBCO膜中的残余应变为0.25％或更小，并且不会导致明显的龟裂。通过电传输和磁化测量研究了样品的超导性能。首次报道了在（001）单晶和{100} <100>织构Cu表面上生长的YBCO膜的高临界电流密度（J（c））值，而中间没有金属涂层。单晶状衬底上的Jc高达3.5 MA / cm（2）。轧制铜带上的J（c）降低约1 MA / cm（2），这是由于在轧制过程中带表面的损坏所致。 [参考：39]

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