Strongly adhering and thick highly tetrahedral amorphous carbon(ta-C) thin films via surface modification bay implantation

M.Chhowalla; G.A.J.Amaratunga

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Strongly adhering and thick highly tetrahedral amorphous carbon(ta-C) thin films via surface modification bay implantation

机译：通过表面修饰托架注入牢固粘附并形成厚的高度四面体非晶碳（ta-C）薄膜

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Highly tetrahedral amorphous carbon thin films have exceptional mechanical properties that make them ideal for many challenging wear applications such as protective overcoats for orthopaedic prostheses and aerospace components. However, the use of ta-C in many wear applications is limited due to the poor adhesion and the inability to grow thick films because of the large compressive stress. Here we report on a simple modification of the substrate growth surface by 1-keV ion bombardment using a cathodic vacuum arc (CVA) plasma prior to deposition of ta-C films at 100 eV. The 1- keV C+ ion bombardment created a thin intermixed layer consisting of substrate and carbon atoms. The generation of the intermixed carbide layer improved the adhesion and allowed the growth of thick (several μm) ta-C layers on metallic substrates.

机译：高四面体无定形碳薄膜具有出色的机械性能，使其非常适合许多具有挑战性的磨损应用，例如整形外科假肢和航空航天部件的防护外涂层。但是，由于粘附力差以及由于大的压应力而无法生长厚膜，因此在许多磨损应用中使用ta-C受到限制。在这里，我们报告了在沉积100 eV的ta-C薄膜之前，使用阴极真空电弧（CVA）等离子体通过1-keV离子轰击对衬底生长表面进行的简单修改。 1- keV C +离子轰击产生了一个薄的混合层，该混合层由底物和碳原子组成。混合碳化物层的产生改善了附着力，并允许在金属基材上生长厚（几微米）的ta-C层。

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《Journal of Materials Research》 |2001年第1期|p.5-8|共4页
作者
M.Chhowalla; G.A.J.Amaratunga;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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2. Thick, well-adhered, highly stressed tetrahedral amorphous carbon [J] . M. Chhowalla Diamond and Related Materials . 2001,第3a7期

机译：厚的，良好粘附的，高应力的四面体无定形碳
3. Thick, well-adhered, highly stressed tetrahedral amorphous carbon [J] . M. Chhowalla Diamond and Related Materials . 2001,第3aPta2期

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机译：邻苯二酚，甲基邻苯二酚和多巴胺在四面体非晶碳（ta-C）薄膜电极上的电化学反应

Strongly adhering and thick highly tetrahedral amorphous carbon(ta-C) thin films via surface modification bay implantation

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