Epitaxial growth of skutterudite (CoSb_3) thin films on (001) InSb by pulsed laser deposition

J. C. Caylor; M. S. Sander; A. M. Stacy

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Epitaxial growth of skutterudite (CoSb_3) thin films on (001) InSb by pulsed laser deposition

机译：脉冲激光沉积在（001）InSb上外延生长方钴矿（CoSb_3）薄膜

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Heteroepitaxial growth of the cubic skutterudite phase CoSb_3 (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 deg. C and a bulk CoSb_3 target with 0.75 at./100 excess sb. An InSb (α_o = 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e. g., CoSb_3 with α_o = 0.9034 nm) on the basis of a presumed 45 rotated relationship with the InSb zinc blende structure.

机译：立方方钴矿相CoSb_3（001）InSb衬底的异质外延生长是通过使用270度的衬底温度通过脉冲激光沉积实现的。 C和大量CoSb_3靶材，其sb过量0.75 at./100。基于与InSb锌共混物结构的45°旋转关系，选择InSb（α_o＝ 0.6478nm）衬底用于其与锑化物方钴矿的晶格配准（例如，CoSb_3，α_o＝ 0.9034nm）。

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《Journal of Materials Research》 |2001年第9期|p.2467-2470|共4页
作者
J. C. Caylor; M. S. Sander; A. M. Stacy;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
中图分类工程材料学;
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Epitaxial growth of skutterudite (CoSb_3) thin films on (001) InSb by pulsed laser deposition

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