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首页> 外文期刊>Journal of Materials Research >Optical and electrical properties of transparent conducting In_2O_3-ZrO_2. films
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Optical and electrical properties of transparent conducting In_2O_3-ZrO_2. films

机译：透明导电In_2O_3-ZrO_2的光电性能。电影

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摘要

The optical transparencies and electrical conductivities of thin films of In_2O_3, mixed with ZrO_2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium--zirconium oxide films with a ZrO_2 content up to a 15 wt were conducting and more than 80 transparent from 450 to 700 nm. As the ZrO_2 content increased from 0 to l5 wt, the electrical resistivities increased from 1.28 x l0~-3 to 6.48 x l0~-2 Ω cm, the carrier densities were decreased from 2.14 x l0~20 to l.0 x 10~18/cm_3, and the Hall mobilities decreased from 2l to 5 cm~2 V~-l s~-', all monotonically.
机译：研究了与ZrO_2混合的In_2O_3薄膜的光学透明性和电导率。使用脉冲激光沉积在室温下将这些膜沉积在玻璃基板上。 ZrO_2含量高达15 wt％的铟-锆氧化物薄膜具有导电性，并且在450至700 nm范围内具有80多种透明性。随着ZrO_2含量从0增至15 wt％，电阻率从1.28 x l0〜-3增加至6.48 x l0〜-2Ωcm，载流子密度从2.14 x l0〜20降低至l.0 x 10〜 18 / cm_3，霍尔迁移率从2l降至5 cm〜2 V〜-ls〜-'，全部单调。

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