Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

Yoshitaka Nakano; Jiro Sakata; Yasunori Taga

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Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

机译：溅射多晶硅膜晶界处界面态的形成过程

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A systematic investigation has been made on surface defect states of crystallites in the crystallization process of sputtered amorphous silicon films by isothermal annealing. Transmission electron microscopic observations indicate a pronounced vertical columnar structure in the upper part of the films, where the crystallization is delayed. Admittance spectroscopy reveals that two newly generated energy levels with the crystallization are attributed to the crystallites in the lower and upper parts of the films in view of the anisotropic crystallization. These thermally induced changes can be well explained by Si--Si shearing modes at the interfaces of crystallites through the process of crystallization.

机译：对通过等温退火溅射非晶硅膜的结晶过程中的微晶表面缺陷状态进行了系统的研究。透射电子显微镜观察表明在膜的上部明显的垂直柱状结构，其中结晶被延迟。导纳光谱显示，鉴于各向异性结晶，两个新产生的能级随结晶化而归因于膜下部和上部的微晶。这些热引起的变化可以通过结晶过程中微晶界面处的Si-Si剪切模式很好地解释。

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《Journal of Materials Research》 |1999年第2期|371-376|共6页
作者
Yoshitaka Nakano; Jiro Sakata; Yasunori Taga;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

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