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首页> 外文期刊>Journal of Materials Research >Rapid thermal processing of lead zirconate titanate thin films on Pt-GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route
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Rapid thermal processing of lead zirconate titanate thin films on Pt-GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

机译：基于新型1,1,1-三（羟甲基）乙烷溶胶-凝胶路线的Pt-GaAs衬底上锆钛酸铅钛薄膜的快速热处理

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Thin films of 1ead zirconate titanate (PZT) having a nominal composition of Pb(Zr_0.53Ti_0.47)O_3 have been prepared on platinized GaAs (Pt-GaAs) substrates using a new l,l,l-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of Ga/As outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 "C for a dwell time of l s using RTP. A single deposition of the precursor sol resulted in a 0.4 mum thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (l 1 l) preferred orientation. Measured average values of remanent polarization (P.) and coercive field (E_c.) for the film annealed at 650 deg C for 1 s were 24 mu C/cm@' and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss~2 tangent at l kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt--Si) substrates using conventional sol-ge1 methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on l,3-propanediol.
机译：使用新的l，l，l-三（羟甲基）乙烷（pt（Zr_0.53Ti_0.47）O_3的标称成分为Pb（Zr_0.53Ti_0.47）O_3的1ead钛酸钛（PZT）薄膜已在铂化GaAs（Pt-GaAs）基板上制备THOME）的溶胶-凝胶技术。为了避免Ga / As扩散到PZT中的问题，使用了快速热处理（RTP）技术将溶胶-凝胶层分解为PZT。通过使用RTP在600或650℃下烧制溶胶-凝胶涂层ls停留时间ls来生产结晶PZT膜。一次沉积前体溶胶会形成0.4微米厚的PZT膜。X射线衍射测量表明薄膜具有较高的（l 1 l）择优取向，在650℃退火1 s的薄膜的剩余极化强度（P.）和矫顽场（E_c。）的测量平均值为24μC / cm @'和32 kV / cm，分别具有950和0.02的低频介电常数和在1 kHz时的损耗〜2切线，这些值与使用常规溶胶在铂硅（Pt-Si）衬底上可获得的值相当-ge1方法，并且是使用较早的基于1，3-丙二醇的溶胶-凝胶路线在镀铂GaAs上制备的PZT薄膜的改进。

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