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首页> 外文期刊>Journal of Materials Research >Microstructural and ferroelectric properties of a chemical solution deposited epitaxial PbZr_0.5Ti_0.5O3 thin film on a SrRuO_3/SrTiO_3 substrate
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Microstructural and ferroelectric properties of a chemical solution deposited epitaxial PbZr_0.5Ti_0.5O3 thin film on a SrRuO_3/SrTiO_3 substrate

机译：化学溶液在SrRuO_3 / SrTiO_3衬底上外延沉积PbZr_0.5Ti_0.5O3薄膜的微观结构和铁电性能

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摘要

Epitaxial PbZr_0.5Ti_0.5O3 (PZT) thin films were grown on top of a SrRuO_3 epitaxial electrode layer on a (l00) SrTiO_3 substrate by the chemical solution deposition method at 600 deg. C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PzT lI (00l) [0l0]sRo Il (001) [0l0]_sto with the substrate. The remnant (P_r) and saturation polarization (P_s) density were measured to be P_r~ 5l.4 pC/cm~2 and P_s- 62.l mu C/cm~2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98 of its initial value) after 7 X l0~8 cycles.
机译：通过化学溶液沉积法在600度下在（100）SrTiO_3衬底上的SrRuO_3外延电极层的顶部上生长外延PbZr_0.5Ti_0.5O3（PZT）薄膜。 C.通过X射线衍射和透射电子显微镜研究了PZT薄膜的微观结构，并使用Ag / PZT / SRO电容器结构测量了铁电性能。 PZT薄膜与衬底具有（001）[010] PzT11（00l）[0l0] sRoII（001）[010]的外延取向关系。在5 V时测得的残余（P_r）和饱和极化（P_s）密度分别为P_r〜51.4 pC / cm〜2和P_s〜62.lμC / cm〜2。铁电疲劳测量表明，净交换极化在7 X 10〜8个周期后开始下降（下降到其初始值的98）。

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