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首页> 外文期刊>Journal of Materials Research >Imprint and fatigue properties of chemical solution derived Pb_1-xLA_x(Zr_yTi_1-y)1-x/4O_3 thin films
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Imprint and fatigue properties of chemical solution derived Pb_1-xLA_x(Zr_yTi_1-y)1-x/4O_3 thin films

机译：化学溶液衍生的Pb_1-xLA_x（Zr_yTi_1-y）1-x / 4O_3薄膜的压印和疲劳性能

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摘要

We have investigated the effect of oxygen vacancies on imprint and fatigue behavior of the PLZT thin films. It is found that the compensation of oxygen vacancies with various dopant concentrations and electrode structures is an important process parameter in determining the tendency to imprint and fatigue. In the case of PLZT thin films, the voltage shifts related to imprint are attributed to the trapping of electrons at ionic defect sites such as oxygen vacancies near the film/electrode interface, the magnitude of polarization, and concentration of defect-dipole complexes involving oxygen vacancies such as V"_Pb--V_o' The strong dependence of fatigue rate on electrode material fOr PLZT thin films is due to the effect of the ferroelectric/electrode interaction on the pinning and/or unpinning rate involving the accumulation of oxygen vacancies near the film/electrode interface during fatigue cycling. By using RuO_2 as the top and/or bottom electrode instead of Pt, improved fatigue properties are obtained compared to Pt/PLZT/Pt capacitors. This is because a reduced accumulation of oxygen vacancies near the interface by the oxide electrode such as RuO_2 may reduce the electronic charge trapping and, consequently, lead to less domain wall pinning.
机译：我们已经研究了氧空位对PLZT薄膜的压印和疲劳行为的影响。发现用各种掺杂剂浓度和电极结构补偿氧空位是确定压印和疲劳趋势的重要工艺参数。在PLZT薄膜的情况下，与压印有关的电压偏移归因于电子在离子缺陷位点的捕获，例如膜/电极界面附近的氧空位，极化幅度以及涉及氧的缺陷-偶极复合物的浓度诸如V“ _Pb--V_o'的空位。疲劳速率对PLZT薄膜电极材料的强烈依赖性是由于铁电/电极相互作用对钉扎率和/或非钉扎率的影响，该钉扎率和/或非钉扎率涉及氧空位的累积。疲劳循环过程中的薄膜/电极界面。通过使用RuO_2代替Pt作为顶部和/或底部电极，与Pt / PLZT / Pt电容器相比，获得了更好的疲劳性能，这是因为界面附近的氧空位减少了诸如RuO_2之类的氧化物电极可减少电荷捕获，从而减少畴壁钉扎。

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