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首页> 外文期刊>Journal of Materials Research >Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications
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Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

机译:非易失性存储应用混合层状钛酸锆钛酸铅薄膜的制备及其铁电性能

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摘要

Mixed composition layered lead zirconate titanate (PZT) films (Zr/Ti ratio = 30/70 + 65/35) with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (1l1) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt e1ectrodes; the retained polarization of the modified film was above 50 after fatigue testing to l09 cycles, and the thermally induced voltage shifts (ΔV) were 0.5l V after heating at l50 deg. C for 44l0 s, two times lower than for films without a stoichiometric thin layer.
机译:通过改进的化学溶液沉积方法成功地制备了在膜/电极界面上具有化学计量的含PZT薄层的混合组成的锆钛酸铅钛酸酯(PZT)膜(Zr / Ti比= 30/70 + 65/35)。这些改性的PZT薄膜具有高度(1l1)的纹理,并具有方形的P-E磁滞回线,具有大的剩余极化和低矫顽场以及低饱和电压。此外,这些薄膜在Pt电极上表现出良好的疲劳性和压印性能。疲劳测试至109次循环后,改性薄膜的保留极化度高于50,在150度加热后,热感应电压偏移(ΔV)为0.5lV。 C持续44l0 s,比没有化学计量薄层的薄膜低两倍。

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