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首页> 外文期刊>Journal of materials science >Influence of the type of conducting glass substrate on the properties of electrodeposited CdS and CdTe thin films
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Influence of the type of conducting glass substrate on the properties of electrodeposited CdS and CdTe thin films

机译：导电玻璃基板类型对电沉积CdS和CdTe薄膜性能的影响

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Owing to the greater efficiency in energy conversion by absorbing energy in a wider range of the solar spectrum, thin film CdS/CdTe solar cells have been popularized as a prominent application of photovoltaics and the technique of electrodeposition (ED) is an ideal method available for producing both CdS and CdTe materials upon its outrivaled simplicity, low cost, scalability and manufacturability. Typically the quality of these deposited thin films depends on several growth parameters and amid them, the type of conducting glass substrate plays a crucial role. This study is focused on the influence of conducting glass substrate on the properties of electrodeposited CdS and CdTe thin films. Two types of glass substrates coated with different transparent conducting oxide (TCO) layers namely; fluorine-doped tin oxide (FTO) and indium tin oxide (ITO) having different sheet resistances (FTO: 7 and 13 Ω/sq and ITO: 7 and 15 Ω/sq) were considered. CdS and CdTe materials were electrodeposited respectively on each of these types of TCO layers using a three electrode electrolytic system under a consistent set of growth parameters which has been pre-optimized with respect to FTO having sheet resistance of 7 Ω/sq. The deposited CdS and CdTe thin layers were subsequently heat treated and characterized to understand their optical, electrical, morphological and structural properties. Accordingly, CdS and CdTe semiconductor materials deposited on glass/FTO (7 Ω/sq) substrates have exhibited better optoelectronic qualities and hence, endorse the requirement of individual growth parameter optimization for each type of TCO glass substrate for the production of good quality CdS and CdTe thin films in photovoltaic device fabrications.
机译：由于通过吸收更宽的太阳光谱范围内的能量来实现更高的能量转换效率，薄膜CdS / CdTe太阳能电池已被广泛用作光伏的重要应用，而电沉积（ED）技术是一种理想的方法，可用于以其出众的简便性，低成本，可扩展性和可制造性来生产CdS和CdTe材料。通常，这些沉积薄膜的质量取决于几个生长参数，并且在其中，导电玻璃基板的类型起着至关重要的作用。这项研究的重点是导电玻璃基板对电沉积CdS和CdTe薄膜性能的影响。两种类型的玻璃基板分别涂有不同的透明导电氧化物（TCO）层；考虑了具有不同薄层电阻（FTO：7和13Ω/ sq和ITO：7和15Ω/ sq）的掺氟氧化锡（FTO）和铟锡氧化物（ITO）。使用三电极电解系统在一致的生长参数集上分别将CdS和CdTe材料分别电沉积在每种类型的TCO层上，该参数已针对薄层电阻为7 sheet / sq的FTO进行了预优化。随后对沉积的CdS和CdTe薄层进行热处理，并对其特性进行表征，以了解其光学，电学，形态和结构特性。因此，沉积在玻璃/ FTO（7Ω/ sq）基板上的CdS和CdTe半导体材料显示出更好的光电质量，因此，对于生产高质量CdS和CdS的每种类型的TCO玻璃基板，都需要对个别生长参数进行优化的要求。光伏器件制造中的CdTe薄膜。

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