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首页> 外文期刊>Journal of materials science >Surface effect of n-GaAs cap on the THz emission in LT-GaAs
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Surface effect of n-GaAs cap on the THz emission in LT-GaAs

机译：n-GaAs帽对LT-GaAs中THz发射的表面效应

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摘要

The deposition of n-GaAs cap on low-temperature GaAs (LT-GaAs) improved the THz emission of LT-GaAs grown at a much lower temperature (< $$300,^{circ }$$ 300 ∘ C), where the defect density is high, without compromising the spectral bandwidth and carrier lifetimes necessary for ultrafast THz detection. The LT-GaAs grown at $$220$$ 220 and $$270,^{circ }$$ 270 ∘ C showed a 192 and 10% enhancement THz emission peak-to-peak intensity, respectively, while the sample grown at $$310,^{circ }$$ 310 ∘ C showed a 49% reduction. The n-GaAs cap reduced the As-related defects density in the LT-GaAs resulting to improved THz emission. The THz emission from the sample grown at $$310,^{circ }$$ 310 ∘ C with already low defect density suffered possibly due to the free carrier absorption by the n-GaAs cap. The results are relevant in future material design of LT-GaAs based photoconductive antenna.
机译：n-GaAs帽在低温GaAs（LT-GaAs）上的沉积改善了在非常低的温度下生长的LT-GaAs的THz发射（<$ 300 ，$300∘C）缺陷密度高，而又不影响超快THz检测所需的频谱带宽和载波寿命。 LT-GaAs分别以220美元，220美元和270美元的270℃生长，而THz发射峰峰值强度分别提高了192％和10％。 $ 310 ，^ { circ} $ 310∘C显示降幅为49％。 n-GaAs帽降低了LT-GaAs中与As有关的缺陷密度，从而改善了THz发射。来自样品的太赫兹发射在缺陷密度已经很低的情况下以$ 310 $ 310∘C生长，这可能是由于n-GaAs帽吸收了自由载流子所致。该结果与基于LT-GaAs的光电导天线的未来材料设计有关。

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