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首页> 外文期刊>Journal of materials science >Synthesis, characterization and electrical properties of TiO_2 modified with SiO_2 and antimony-doped tin oxide
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Synthesis, characterization and electrical properties of TiO_2 modified with SiO_2 and antimony-doped tin oxide

机译:SiO_2和锑掺杂氧化锡修饰的TiO_2的合成,表征及电性能

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摘要

The composite with high electrical conductivity have been successfully synthesized by the modification of TiO~(2)with SiO~(2)and antimony-doped tin oxide (ATO). X-ray diffraction, scanning electron microscope and transmission electron microscopy were employed to characterize the crystal phase and surface morphology. The results revealed that the SiO~(2)was of amorphous and TiO~(2)after modification presented a core−shell structure with the shell thickness about 15−17 nm. X-ray photoelectron spectroscopy results indicated that the SiO~(2)and ATO particles were well anchored on the surface of TiO~(2)by the Ti–O–Si and Si–O–Sn bonds. The volume resistivity of the TiO~(2)/SiO~(2)–ATO composite could reach 2.3 Ω cm when the SiO~(2)content was 10 wt%, which was one-third of the TiO~(2)/ATO composite.
机译:通过SiO〜(2)和锑掺杂氧化锡(ATO)对TiO〜(2)的改性,成功合成了高导电率的复合材料。 X射线衍射,扫描电子显微镜和透射电子显微镜被用来表征晶相和表面形态。结果表明,改性后的SiO〜(2)为非晶态,TiO〜(2)为核-壳结构,壳厚约15-17nm。 X射线光电子能谱分析结果表明,SiO〜(2)和ATO颗粒通过Ti–O–Si和Si–O–Sn键很好地固定在TiO〜(2)表面。当SiO〜(2)的含量为10wt%时,TiO〜(2)/ SiO〜(2)–ATO复合材料的体积电阻率可以达到2.3cm,是TiO〜(2)/的三分之一。 ATO复合材料。

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