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首页> 外文期刊>Journal of materials science >Far-IR transmittance and metal-insulator phase transition properties of VO_2 films using Al_2O_3 as buffer layer
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Far-IR transmittance and metal-insulator phase transition properties of VO_2 films using Al_2O_3 as buffer layer

机译：以Al_2O_3为缓冲层的VO_2薄膜的远红外透射率和金属-绝缘体相变特性

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摘要

Owing to its outstanding metal-insulator transition, vanadium dioxide is considered as an attractive material used for optical modulation devices at far-IR bands. In this work, vanadium dioxide films were successfully prepared on (111) directional silicon substrates using Al2O3 as buffer layer by direct current magnetron sputtering. It is worth noting that, Al2O3 buffer layer significantly enhances the amplitude modulation at far-IR bands. Particularly, when Al2O3 buffer layer's thickness increases to similar to 40nm and VO2 film is similar to 300nm, the amplitude modulation is largely increased from 51.2 to 71.3% at 395cm(-1) and from 18.0 to 40.2% at 280cm(-1). According to XRD, XPS and SEM tests, it can be found that Al2O3 buffer layer affects the composition, crystal structure and metal-insulator transition properties of the films. Moreover, compared with VO2 films deposited on silicon substrates, VO2 films using Al2O3 as buffer layer exhibit better metal-insulator phase transition properties with narrower hysteresis width (11.8 degrees C, 6.7 degrees C narrower than former films). Such excellent metal-insulator transition properties indicate that VO2 films using Al2O3 as buffer layer have great potential for far-IR bands modulation applications.
机译：由于其出色的金属绝缘体过渡性能，二氧化钒被认为是用于远红外波段的光调制设备的有吸引力的材料。在这项工作中，通过直流磁控溅射在Al2O3作为缓冲层上成功地在（111）定向硅衬底上制备了二氧化钒膜。值得注意的是，Al2O3缓冲层大大增强了远红外波段的幅度调制。特别是，当Al2O3缓冲层的厚度增加到类似于40nm且VO2膜类似于300nm时，振幅调制在395cm（-1）时从51.2％大幅增加到71.3％，在280cm（-1）时从18.0％大幅增加到40.2％。根据XRD，XPS和SEM测试，可以发现Al2O3缓冲层会影响薄膜的组成，晶体结构和金属-绝缘体的转变性能。此外，与沉积在硅基板上的VO2薄膜相比，使用Al2O3作为缓冲层的VO2薄膜具有更好的金属-绝缘体相变特性，并且具有较窄的磁滞宽度（11.8摄氏度，比以前的薄膜窄6.7摄氏度）。如此优异的金属-绝缘体过渡性能表明，使用Al2O3作为缓冲层的VO2膜在远红外波段调制应用中具有巨大潜力。

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  • 来源
    《Journal of materials science》 |2019年第7期|6448-6458|共11页
  • 作者

    Yang Renhui; Wu Zhiming; Ji Chunhui; Wu Xuefei; Xiang Zihao; Zhang Fan; Li Weizhi; Wang Jun; Dong Xiang; Jiang Yadong;

  • 作者单位

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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