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首页> 外文期刊>Journal of materials science >Influence of mono energetic gamma radiation on structural and electrical properties of TiO_2 thin film coated on p-type porous silicon
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Influence of mono energetic gamma radiation on structural and electrical properties of TiO_2 thin film coated on p-type porous silicon

机译：单能γ射线对p型多孔硅上TiO_2薄膜结构和电学性能的影响

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摘要

Titanium dioxide thin film was coated on p-type porous silicon by sol-gel spin coating method. The prepared samples were irradiated by the mono-energetic gamma radiation at Auto-irradiation facility with the Cesium-137 for the Gamma dose range from 100 to 1000mSv. Gamma irradiated samples revealed that the physical changes of titanium oxide/porous silicon layer found to be varying with increasing gamma dose. The irradiated titanium oxide/porous silicon layer were investigated by scanning electron microscopy, X-ray diffraction, Fourier transform infra-red, Photoluminescence and I-V characteristics studies. The surface morphology of the irradiated titanium oxide/porous silicon layer has shown deformation with increasing gamma dose. The X-ray diffraction patterns of titanium oxide/porous silicon layer after irradiation revealed changes in crystallite size, dislocation density, strain and phase content. These changes in anatase (004) are linear with gamma dose than the rutile (310) of TiO2-PSi. Fourier transform infra-red spectrums of the irradiated samples showed an increase in intensity of vibration modes with the increase of the radiation dose. Photoluminescence peaks are found to be in the range of 330 to 360nm for all the irradiated samples and the intensity of Photoluminescence peak increased for the irradiated samples with increasing gamma dose. I-V Characteristics revealed that the electrical conductivity of irradiated samples increased linearly with gamma dose. The linear changes in electrical property of titanium oxide/porous silicon under the influence of mono-energetic gamma photons gives a positive indication that it can be further studied for the development of radiation sensor for applications in nuclear field.
机译：通过溶胶-凝胶旋涂法将二氧化钛薄膜涂覆在p型多孔硅上。制备的样品在自动辐照设备中用铯137进行单能伽玛辐照，伽玛剂量范围为100至1000mSv。伽马射线辐照的样品表明，发现氧化钛/多孔硅层的物理变化随伽马射线剂量的增加而变化。通过扫描电子显微镜，X射线衍射，傅立叶变换红外，光致发光和IV特性研究辐照的氧化钛/多孔硅层。辐照的氧化钛/多孔硅层的表面形貌显示出随着伽马剂量的增加而变形。辐照后的氧化钛/多孔硅层的X射线衍射图显示出微晶尺寸，位错密度，应变和相含量的变化。与TiO2-PSi的金红石（310）相比，锐钛矿（004）的这些变化与γ剂量呈线性关系。辐照样品的傅立叶变换红外光谱显示，随着辐射剂量的增加，振动模式的强度增加。对于所有被辐照的样品，发现光致发光峰在330至360nm的范围内，并且随着γ剂量的增加，被辐照的样品的光致发光峰的强度增加。 I-V特性显示，被辐照样品的电导率随伽马剂量线性增加。在单能伽马光子的影响下，氧化钛/多孔硅的电学性质的线性变化表明，可以进一步研究它，以开发用于核领域的辐射传感器。

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  • 来源
    《Journal of materials science》 |2019年第7期|7135-7149|共15页
  • 作者

    Pandaram P.; Lawrence B.; Prithivikumaran N.; Jeyakumaran N.;

  • 作者单位

    TLD Lab, Kudankulam Nucl Power Project, Tirunelveli 627106, Tamil Nadu, India;

    VHNSN Coll Autonomous, Virudunagar 626001, Tamil Nadu, India;

    VHNSN Coll Autonomous, Virudunagar 626001, Tamil Nadu, India;

    VHNSN Coll Autonomous, Virudunagar 626001, Tamil Nadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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