...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of materials science >Dielectric, modulus and conductivity studies of Au/PVP-Si (MPS) structure in the wide range of frequency and voltage at room temperature
【24h】

Dielectric, modulus and conductivity studies of Au/PVP-Si (MPS) structure in the wide range of frequency and voltage at room temperature

机译：Au / PVP / n-Si（MPS）结构在室温下在宽频率和电压范围内的介电常数，模量和电导率研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Both the real-imaginary components of complex dielectric permittivity and electric modulus, and ac conductivity of Au/PVP-Si (MPS) structures were analyzed by admittance spectroscopy technique between 1 and 500kHz, -3 and 5V. The polyvinylpyrrolidone (PVP) polymer layer was deposited on n-Si wafer by spin-coating technique. The epsilon, epsilon, M, M and sigma(ac) values were calculated from the admittance measurements and they are quite function of frequency and voltage due to a special distribution of surface states at PVP-Si interface, interfacial/dipole polarizations at low frequencies. While the epsilon and epsilon values decrease as frequency increases, the sigma(ac), M and M increase. The ln(sigma(ac)) vs ln() plot for 3V has two linear region between 1 and 20kHz, 30 and 500kHz frequencies, respectively. The obtained 0.033 slope value for low-frequencies which corresponding to dc conductivity and it is almost independent of frequency, but it obtained 0.46 for high-frequencies which corresponding ac conductivity and is strong function of frequency due to the increase eddy current. As a result, the prepared MPS structure can be used as charges/energy storage device due to the dielectric property of the PVP polymer layer.
机译：通过介电谱技术在1至500kHz，-3至5V之间分析了复介电常数和电模量的虚构分量以及Au / PVP / n-Si（MPS）结构的交流电导率。通过旋涂技术将聚乙烯吡咯烷酮（PVP）聚合物层沉积在n-Si晶片上。 epsilon，epsilon，M，M和sigma（ac）值是从导纳测量值计算得出的，由于PVP / n-Si界面处的表面状态有特殊的分布，界面处的偶极极化，因此它们是频率和电压的函数低频。当ε和ε值随频率增加而减小时，sigma（ac），M和M增加。 3V的ln（sigma（ac））与ln（）曲线分别具有1至20kHz，30至500kHz频率之间的两个线性区域。对于低频，获得的0.033斜率值与直流电导率相对应，并且几乎与频率无关，但是由于涡流的增加，对于交流和电导率而言，高频率的斜率值获得了0.46的强频率函数。结果，由于PVP聚合物层的介电性质，所制备的MPS结构可以用作电荷/能量存储装置。

著录项

  • 来源
    《Journal of materials science》 |2019年第7期|6853-6859|共7页
  • 作者

    Alptekin S.; Tataroglu A.; Altinda S.;

  • 作者单位

    Cankiri Karatekin Univ, Fac Sci, Dept Phys, Cankiri, Turkey;

    Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey;

    Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号