...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of materials science >The effects of air, oxygen and water exposure on the sub-bandgap absorption, the electronic conductivity and the ambipolar diffusion length in highly crystalline microcrystalline silicon films for photovoltaic applications
【24h】

The effects of air, oxygen and water exposure on the sub-bandgap absorption, the electronic conductivity and the ambipolar diffusion length in highly crystalline microcrystalline silicon films for photovoltaic applications

机译：空气，氧气和水的暴露对光伏应用中高度结晶的微晶硅薄膜中亚带隙吸收，电子电导率和双极性扩散长度的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Reversible and irreversible changes due to long term air and short term de-ionized water (DIW) or pure oxygen exposure were investigated in about 1μm thick hydrogenated microcrystalline silicon (μc-Si:H) films deposited on rough glass substrates, thereby comparing highly crystalline with compact material. Time and temperature dependent dark conductivity, steady-state photoconductivity, the steady-state photocarrier grating and dual-beam photoconductivity methods have been used to study the effects. Standard measurement procedures defined previously have been carefully applied to record the changes after different treatments using the steady-state methods under light. After long term air exposure of highly crystalline (ic-Si:H films, a thermal annealing step leads to an increase in dark conductivity (σ_D) and steady-state photoconductivity (σ_(ph)) as well as to a significant increase in the sub-bandgap absorption. These effects are likely due to a reversible recovery from surface adsorbents in a porous microstructure after air exposure resulting in surface charge and Fermi level shifts in agreement with earlier results. Compact μc-Si:H films showed only marginal effects upon an annealing after long term air exposure suggesting much reduced susceptibility to surface adsorbent induced by Fermi level shifts. Five hours exposure to de-ionized water at 80 ℃ caused more than an order of magnitude increase in σ_d and σ_(ph) and a substantial decrease in the sub-bandgap absorption spectrum in highly crystalline as well as in compact uc-Si:H films. In addition, minority carrier diffusion lengths measured by the steady-state photocarrier grating method improved significantly. The changes after exposure to water were not reversible upon our standard annealing procedure. Exposure to high purity oxygen gas at 150 ℃ resulted in similar effects like the exposure to DIW. Also here the changes in material properties were not reversible upon annealing. Results are discussed in terms of adsorption and chemical reactions on surfaces in the porous highly crystalline material versus the materials with more compact structures. Results are compared to earlier observations and consequences for device application will be indicated.
机译：在沉积于粗糙玻璃基板上的约1μm厚的氢化微晶硅（μc-Si：H）膜中，研究了由于长期空气和短期去离子水（DIW）或纯氧暴露引起的可逆和不可逆变化，从而比较了高结晶度与紧凑的材料。时间和温度相关的暗电导率，稳态光电导率，稳态光电载波光栅和双光束光电导方法已用于研究其影响。先前定义的标准测量程序已被仔细应用，以在稳态下使用稳态方法记录不同处理后的变化。在长时间暴露于高结晶度（ic-Si：H薄膜）的空气之后，热退火步骤会导致暗电导率（σ_D）和稳态光电导率（σ_（ph））增大，并且导致显着增大这些作用可能是由于暴露于空气后多孔微结构中表面吸附剂的可逆恢复，导致表面电荷和费米能级移动与早期结果一致，致密的μc-Si：H薄膜仅显示了边际效应。长期暴露于空气中后进行退火，这表明费米能级变化对表面吸附剂的敏感性大大降低;在80℃的去离子水中暴露5小时会导致σ_d和σ_（ph）的增加幅度超过一个数量级，并且显着降低在高结晶度和致密uc-Si：H薄膜中的子带隙吸收光谱中，此外，通过稳态光电载流子光栅法测量的少数载流子扩散长度显着。在我们标准的退火程序中，暴露于水后的变化是不可逆的。暴露于150℃的高纯氧气中会产生类似的效果，例如暴露于DIW。同样在这里，材料性能的变化在退火后是不可逆的。根据多孔高结晶性材料与具有更紧凑结构的材料在表面上的吸附和化学反应来讨论结果。将结果与以前的观察结果进行比较，并指出对设备应用的后果。

著录项

  • 来源
    《Journal of materials science》 |2020年第5期|3960-3975|共16页
  • 作者

    Mehmet Günes; V. Smirnov; F. Finger; R.Brüggemann;

  • 作者单位

    Department of Physics Mugla Sitki Kocman University Kötekli Yerleskesi Mugla 48000 Turkey;

    Forschungszentrum Jülich IEK-5 Photovoltaik Jülich 52425 Germany;

    Institut für Physik Carl Von Ossietzky Universität Oldenburg Oldenburg 26111 Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号