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首页> 外文期刊>Journal of materials science >A study of microwave absorbing properties in Co-Gd doped M-type Ba-Sr hexaferrites prepared using ceramic method
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A study of microwave absorbing properties in Co-Gd doped M-type Ba-Sr hexaferrites prepared using ceramic method

机译：陶瓷法制备掺Co-Gd的M型Ba-Sr六方铁氧体的微波吸收特性研究

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摘要

M-type Barium-Stronium hexaferrites with the chemical composition Ba_(0.5)Sr_(0.5)Co_xGd_xFe_(12−2x)O_(19) (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were prepared using a conventional ceramic method. X-ray diffraction (XRD) technique was used to explore the structure characterization and phase purity of the prepared compositions. The absorber testing device method was adopted for investigating the dependence of microwave absorption of ferrite compositions on substitution and thickness from 8.2 to 12.4 GHz. The quarter wavelength and impedance matching mechanism are explored to evaluate the microwave absorption. XRD analysis revealed formation of M (magnetoplumblite) phase in compositions x = 0.0, 0.2, while doped compositions (x = 0.4, 0.6, 0.8 and 1.0) displayed coexistence of M-phase along with orthorhombic phase (BaFe_2O_4). For maximum microwave absorption, the doping of Co~(2+) and Gd~(3+) leads to the reduction in thickness of composition and frequency shift from the high to low frequency region. Composition x = 0.8 exhibits good microwave absorber characteristics with 96.90% absorbed power and reflection loss of −15.0 dB at matching frequency and thickness of 8.2 GHz and 2.9 mm respectively.
机译：使用常规陶瓷制备化学成分为Ba_（0.5）Sr_（0.5）Co_xGd_xFe_（12-2x）O_（19）（x = 0.0、0.2、0.4、0.6、0.8和1.0）的M型钡锶铁氧体方法。使用X射线衍射（XRD）技术来研究所制备组合物的结构表征和相纯度。采用吸收器测试装置方法研究铁氧体成分的微波吸收对8.2至12.4 GHz范围内的取代和厚度的依赖性。探索四分之一波长和阻抗匹配机制，以评估微波吸收。 XRD分析表明，组成x = 0.0、0.2的M（磁铅矿）相的形成，而掺杂组成（x = 0.4、0.6、0.8和1.0）的组成显示M相与正交晶相（BaFe_2O_4）共存。为了最大程度地吸收微波，Co〜（2+）和Gd〜（3+）的掺杂会导致成分厚度的减小和频率从高频到低频的偏移。组成x = 0.8具有良好的微波吸收特性，在匹配频率和厚度分别为8.2 GHz和2.9 mm时，吸收功率为96.90％，反射损耗为-15.0 dB。

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  • 来源
    《Journal of materials science》 |2017年第16期|11969-11978|共10页
  • 作者

    Joshi Rajat P.; Singh Charanjeet; Singh Jasbir; Kaur Dalveer; Narang Sukhleen Bindra; Jotania Rajshree B.;

  • 作者单位

    Department of Electronics and Communication Engineering, Rayat Bahra Institute of Engineering and Nanotechnology Hoshiarpur, Hoshiarpur, Punjab, India;

    Department of Electronics and Communication Engineering, Rayat Bahra Institute of Engineering and Nanotechnology Hoshiarpur, Hoshiarpur, Punjab, India,Department of Electronics Technology, Guru Nanak Dev University, Amritsar, Punjab, India;

    Department of Electronics and Communication Engineering, Yadavindra college of Engineering, Punjabi University Guru Kashi Campus, Talwandi Sabo, Punjab, India;

    Department of Electronics and Communication Engineering, I.K.G. Punjab Technical University, Kapurthla, India;

    Department of Electronics Technology, Guru Nanak Dev University, Amritsar, Punjab, India;

    Department of Physics, University school of sciences, Gujarat University, Navrangpura, Ahmedabad, Gujrat, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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