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首页> 外文期刊>Journal of materials science >Doping and thickness variation influence on the structural and sensing properties of NiO film prepared by RF-magnetron sputtering
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Doping and thickness variation influence on the structural and sensing properties of NiO film prepared by RF-magnetron sputtering

机译：掺杂和厚度变化对射频磁控溅射制备的NiO薄膜的结构和感测性能的影响

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摘要

The NiO and NiO-Cu doped films with various Cu contents of 5.68, 10.34, and 14.64 at%. Were deposited on a glass substrate with various thickness 50, 100, and 150 nm by RF-reactive magnetron sputtering technique. The effect of the thickness and the doping on the structural, electrical, and sensory properties of the films was mainly investigated. The X-ray diffraction studies revealed that all the deposited films were of single crystalline nature and exhibited cubic structure with preferential growth along 200 and only NiO peaks appear in the NiO-Cu films and when the thickness increased from 50 to 150 nm, the grain size increases from 24.38 to 25.036 nm. Compositional analysis indicated that Cu content increased in the film as the bonded chips increase in the target surface. The electrical resistivity of the NiO film showed a high electrical resistivity 280 K Ω detected by a four point probe measurement and when the Cu content in the films is 5.68 at%. The p value is reduced significantly to 45.9 K Ω as Cu content is increased to 10.34 at%, and it further decreases to 25.3 K Ω when the Cu content further increases to 14.64 at% the resistivity value decrease to 10.45 K Ω. The Hall measurement for all NiO and Cu-doped NiO films shows p-type conduction and reduction in the mobility of charge carrier from 9.67 × 10~2 to 8.46 × 10 cm~2/V s, when the concentrations of the charge carriers increase from 4.30 × 10~(10) to 4.23 × 10~(13) cm~(-3). The sensory measurements for NiO and Cu-doped NiO films, show that the 50 nm thickness has the highest sensitivity and response time for the NO_2 gas at the operating temperature 150 ℃.
机译：具有5.68、10.34和14.64 at％的各种Cu含量的NiO和NiO-Cu掺杂膜。通过RF反应磁控溅射技术将其沉积在具有各种厚度50、100和150nm的玻璃基板上。主要研究了厚度和掺杂对薄膜结构，电学和感官性能的影响。 X射线衍射研究表明，所有沉积膜均为单晶性质，并呈立方结构，沿200优先生长，NiO-Cu膜中仅出现NiO峰，当厚度从50 nm增加到150 nm时，晶粒尺寸从24.38 nm增加到25.036 nm。成分分析表明，随着键合芯片在目标表面的增加，薄膜中的铜含量增加。通过四点探针测量以及当膜中的Cu含量为5.68at％时，NiO膜的电阻率显示出280KΩ的高电阻率。随着Cu含量增加到10.34 at％，p值显着降低到45.9 KΩ，当Cu含量进一步增加到14.64 at％时，p值进一步降低到25.3 KΩ，电阻率值降低到10.45 KΩ。所有NiO和Cu掺杂的NiO薄膜的霍尔测量结果表明，当载流子浓度增加时，p型导电和载流子迁移率从9.67×10〜2降低到8.46×10 cm〜2 / V s从4.30×10〜（10）到4.23×10〜（13）cm〜（-3）。 NiO和Cu掺杂NiO薄膜的感官测量结果表明，在150℃的工作温度下，50 nm厚度对NO_2气体具有最高的灵敏度和响应时间。

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  • 来源
    《Journal of materials science》 |2016年第2期|1270-1277|共8页
  • 作者

    Ehssan Salah Hassan; Asrar Abdulmunem Saeed; Abdulhussain K. Elttayef;

  • 作者单位

    Department of Physics, College of Science, Al-Mustansiriyah University, Baghdad, Iraq;

    Department of Physics, College of Science, Al-Mustansiriyah University, Baghdad, Iraq;

    Ministry of Science and Technology, Baghdad, Iraq;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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