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首页> 外文期刊>Journal of materials science >Dielectric, ferroelectric and conduction behavior of tungsten modified SrBi_4Ti_4O_(15) ceramic
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Dielectric, ferroelectric and conduction behavior of tungsten modified SrBi_4Ti_4O_(15) ceramic

机译：钨改性SrBi_4Ti_4O_（15）陶瓷的介电，铁电和导电行为

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摘要

The effect of Tungsten (W) modification of the structural, dielectric, ferroelectric and conduction behavior of SrBi_4Ti_4O_(15) ceramic with general formula SrBi_(4-2x/3) Ti_(4-x)W_xO_(15) (x = 0.0, 0.02, 0.04, 0.06, 0.08, 0.1) was investigated. The ceramic samples were synthesized by the conventional solid-state reaction method. X-ray diffraction (XRD) and Raman scattering techniques have been employed to characterize the structural property which demonstrated that all the compositions were single phase four layered crystalline structure, involving slight reduction of lattice distortion with an increase in W doping level. The temperature dependent dielectric study revealed that the dielectric constant and the transition temperature decreases with increase in W content. The temperature dependent Ac conductivity was studied and the activation energy was calculated for all the compositions. The ferroelectric and piezoelectric properties enhanced with Tungsten content, which may be attributed to the decrease of oxygen vacancies. Among all the compositions, x = 0.1 showed improved ferroelectric and piezoelectric properties.
机译：钨（W）修饰通式SrBi_（4-2x / 3）Ti_（4-x）W_xO_（15）的SrBi_4Ti_4O_（15）陶瓷的结构，介电，铁电和导电行为的影响（x = 0.0， 0.02、0.04、0.06、0.08、0.1）。通过常规的固态反应方法合成陶瓷样品。 X射线衍射（XRD）和拉曼散射技术已被用来表征结构性能，该性能表明所有组成均为单相四层晶体结构，包括晶格畸变的轻微降低以及W掺杂水平的提高。随温度变化的介电研究表明，介电常数和转变温度随W含量的增加而降低。研究了随温度变化的Ac电导率，并计算了所有组合物的活化能。钨含量提高了铁电和压电性能，这可能归因于氧空位的降低。在所有组成中，x ＝ 0.1显示出改善的铁电和压电性能。

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  • 来源
    《Journal of materials science》 |2016年第2期|1217-1226|共10页
  • 作者

    P. Nayak; T. Badapanda; S. Panigrahi;

  • 作者单位

    Department of Physics, National Institute of Technology, Rourkela, Odisha 769008, India;

    Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha 752054, India;

    Department of Physics, National Institute of Technology, Rourkela, Odisha 769008, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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