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Stability and thermoelectric properties of ITON:Pt thin film thermocouples

机译:IRON:Pt薄膜热电偶的稳定性和热电性能

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摘要

Refractory thin film thermocouples can provide more accurate surface temperature measurement and faster response with excellent chemical and electrical stability at high temperatures in harsh oxidizing environment. Indium tin oxide (ITO) thin films were fabricated by radio frequency magnetron sputtering in gas mixture of Ar and N_2. The introduction of nitrogen results in significant variations of the electrical and thermoelectric property of ITO thin films. This nitrogen doped ITO thin film was used as negative thermal element to form ITON:Pt thin film thermocouple on Ni-based superalloy substrate. The stability and thermoelectric performance of this thin film thermocouple was investigated up to 1000 ℃.
机译:耐火薄膜热电偶可提供更精确的表面温度测量和更快的响应,在苛刻的氧化环境中在高温下具有出色的化学和电稳定性。在Ar和N_2的混合气体中通过射频磁控溅射制备了氧化铟锡(ITO)薄膜。氮的引入导致ITO薄膜的电和热电性质的显着变化。将此氮掺杂的ITO薄膜用作负热元件,以在Ni基高温合金基底上形成ITON:Pt薄膜热电偶。研究了该薄膜热电偶在1000℃以下的稳定性和热电性能。

著录项

  • 来源
    《Journal of materials science》 |2016年第2期|1725-1729|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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