...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of materials science >Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets
【24h】

Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets

机译：磁控溅射重掺杂硅靶材制备的掺硼和磷掺杂的微晶硅薄膜的电性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The boron(B)- and phosphorous(P)-doped microcrystalline silicon (Si) thin films were prepared by magnetron sputtering of heavily B- and P-doped Si targets followed by rapid thermal annealing (RTA), their electrical properties were characterized by temperature-dependent Hall and resistivity measurements. It was observed that the dark conductivity and carrier concentration of the 260 nm B-doped Si films annealed at 1,100 ℃ in Ar were 3.4 S cm~(-1) and 1.6 × 10~(-19) cm~(-3), respectively, which were about one order of magnitude higher than that of P-doped Si films. The activation energy of the B- and P-doped Si films were determined to be 0.23 eV and 0.79 eV, respectively. The dark conductivity of B- and P-doped Si films increased with the increase of film thickness, RTA temperature, and the incorporation of H_2 in Ar during RTA. The present work provides an easy and non-toxic method for the preparation of doped microcrystalline Si thin films.
机译：通过磁控溅射重掺杂B和P的Si靶材，然后进行快速热退火（RTA），制备了掺硼（B）和磷（P）的微晶硅（Si）薄膜，其电性能具有以下特点：温度相关的霍尔和电阻率测量。观察到在1100℃退火的260 nm B掺杂Si薄膜的暗电导率和载流子浓度分别为3.4 S cm〜（-1）和1.6×10〜（-19）cm〜（-3），分别比掺杂P的Si膜高一个数量级。 B和P掺杂的Si膜的活化能分别确定为0.23 eV和0.79 eV。 B和P掺杂的Si薄膜的暗电导率随薄膜厚度，RTA温度以及RTA期间Ar中H_2的引入而增加。本工作为制备掺杂的微晶硅薄膜提供了一种简便且无毒的方法。

著录项

  • 来源
    《Journal of materials science》 |2013年第6期|2122-2127|共6页
  • 作者

    Weiyan Wang; Jinhua Huang; Wei Xu; Junjun Huang; Yuheng Zeng; Weijie Song;

  • 作者单位

    Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Ningbo 315201,People's Republic of China;

    Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Ningbo 315201,People's Republic of China;

    Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Ningbo 315201,People's Republic of China;

    Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Ningbo 315201,People's Republic of China;

    Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Ningbo 315201,People's Republic of China;

    Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences, Ningbo 315201,People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号