Thermal quenching of the photoluminescence in amorphous silicon-carbon alloys doped with Er ions

S. Kazitsyna-Baranovski; G. Weiser

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Thermal quenching of the photoluminescence in amorphous silicon-carbon alloys doped with Er ions

机译：掺Er离子的非晶硅碳合金中光致发光的热猝灭

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Recombination of electron-hole pairs in the bandtails of Er-doped Si_(1-x)C_x:H films yields besides the intrinsic emission a narrow band at 1.5 μm resulting from energy transfer to Er~(3+) ions by resonant Forster transfer from electron-hole pairs in the host. Host and guest emission decay at elevated temperatures due to competing non-radiative recombination with activation energies around 120 meV and 40 meV. The larger activation energy results from carrier motion and affects both emission bands while the smaller activation energy is attributed to on-site multiphonon recombination which affects only the intrinsic luminescence and not the emission of Er ions.

机译：掺Er的Si_（1-x）C_x：H薄膜的带隙中电子-空穴对的重组产生了本征发射，在1.5μm处产生窄带，这是由于共振的Forster转移将能量转移至Er〜（3+）离子来自宿主中的电子-空穴对。由于竞争性的非辐射重组以及约120 meV和40 meV的活化能，主机和客体发射在高温下衰减。较大的活化能归因于载流子运动并影响两个发射带，而较小的活化能归因于现场的多声子复合，这种复合仅影响固有发光而不影响Er离子的发射。

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来源
《Journal of Materials Science. Materials in Electronics》 |2007年第s1期|p.S243-S246|共4页
作者
S. Kazitsyna-Baranovski; G. Weiser;
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作者单位

Fachbereich Physik, Philipps-Universitaet Marburg, Renthof 5, Marburg 35032, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;计量学;
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1. Photoluminescence thermal quenching behaviors of Er-doped SiOx (x < 2) prepared by ion implantation [J] . Zhang CS, Xao HB, Wang YJ, Physica, B. Condensed Matter . 2005,第1a4期

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2. Thermal quenching of photoluminescence from Er-doped GaN thin films [J] . J.T. Seo, U. Hommerich, D.C. Lee Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2002,第1a2期

机译：掺Er GaN薄膜的光致发光热猝灭
3. Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process [J] . Joe SAKAI, Atsushi MASUDA, Haruo AKIYAMA, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第7A期

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4. Enhanced Photoluminescence of Bi/Er Co-doped Fiber by Quenching and Cooling under 830 nm Pumping [C] . Haijiao Xu, Binbin Yan, Jinfeng Lin, International Conference on Photonics in Switching and Computing;OptoElectronics and Communications Conference . 2019

机译：830 nm泵浦下的淬火和冷却增强了Bi / Er共掺杂光纤的光致发光
5. The mechanism of thermally-activated photoluminescence quenching and its correlation with transport in electronically-coupled pbs quantum dot arrays. [D] . Zhang, Jing. 2013

机译：在电子耦合的pbs量子点阵列中，热激活的光致发光猝灭机理及其与传输的相关性。
6. Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials [O] . Hui-Lin Hsu, Keith R. Leong, I-Ju Teng, 2014

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机译：镱掺杂非晶碳基光子材料氘化还原光致发光猝灭
8. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films [R] . Seo, J. T. , Hoemmerich, U. , Lee, D. C. , 2002

机译：Er掺杂GaN薄膜光致发光的热猝灭

Thermal quenching of the photoluminescence in amorphous silicon-carbon alloys doped with Er ions

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