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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Photoelectrochemical solar cell studies on electroplated cuprous oxide thin films
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Photoelectrochemical solar cell studies on electroplated cuprous oxide thin films

机译：电镀氧化亚铜薄膜的光电化学太阳能电池研究

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摘要

Cuprous oxide (Cu2O) is an interesting p-type semiconductor with a band gap of 2 eV suitable for solar cell applications. Deposition of Cu2O thin films by electrodeposition from aqueous solutions is a low temperature and inexpensive technique. in the present work, Cu2O thin films were cathodically deposited on Cu and tin oxide coated glass substrates by the cathodic reduction of copper (II) lactate solution. The optimized deposition conditions to synthesize cuprous oxide thin films were experimentally identified as; Deposition potential: -0.555 V versus SCE, pH: 9.0 +/- 0.1, Bath temperature: 70 degrees C. X-ray diffraction studies revealed the formation of single phase cubic Cu2O films. The effect of annealing on the structure and morphology of Cu2O thin films are studied. The dielectric susceptibility, optical conductivity and packing density are evaluated. Photoelectrochemical solar cells based on p-Cu2O films are constructed. Spectral response studies indicate a peak in photo current density around 600 nm corresponding to the band gap of Cu2O thin films. The effects of annealing, chemical etching and photo etching on the solar cell parameters are studied.
机译：氧化亚铜（Cu2O）是一种有趣的p型半导体，其带隙为2 eV，适用于太阳能电池应用。通过从水溶液中电沉积来沉积Cu 2 O薄膜是一种低温且廉价的技术。在本工作中，通过阴极还原乳酸铜（II）溶液将Cu2O薄膜阴极沉积在镀有Cu和氧化锡的玻璃基板上。实验确定了合成氧化亚铜薄膜的最佳沉积条件为：沉积电势：相对于SCE的-0.555 V，pH：9.0 +/- 0.1，浴温：70℃。X射线衍射研究表明形成了单相立方Cu2O膜。研究了退火对Cu2O薄膜结构和形貌的影响。评估介电敏感性，光导率和堆积密度。构建了基于p-Cu2O薄膜的光电化学太阳能电池。光谱响应研究表明，在600 nm附近的光电流密度峰值对应于Cu2O薄膜的带隙。研究了退火，化学蚀刻和光蚀刻对太阳能电池参数的影响。

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