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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Special Issue on oxides in electronics, dedicated to Cyril Hogarth
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Special Issue on oxides in electronics, dedicated to Cyril Hogarth

机译：电子产品氧化物专刊，专为西里尔·霍加斯（Cyril Hogarth）

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Professor Cyril Alfred Hogarth (Physics, PhD 1948, DSc 1977) has made significant contributions to the field of oxide semiconductors through his pioneering research. His interest in oxide materials started in 1946 when he was working as a PhD student with Professor J. P. Andrews at Queen Mary College on a problem to determine the dependence of thermoelectric power of CdO on ambient oxygen pressure. His solution with its theoretical interpretation was published first in Nature (January 1948) and then in Philosophical Magazine (April 1948). During this period, he also studied charge transport and semiconducting properties of NiO, ZnO and CuO. In 1951, it was 65th birthday of late Professor Walter Schottky. Professor Hogarth was then a young scientist but invited as a "Lieber Kollege" to publish some of his oxide work in a special issue of Zeits fur Phys Chemie, honouring Professor Schottky. This is not only the time that his work earned recognition from a distinguished peer group. During 1949 to 1951, he led a small group at the University of Reading working on the physics of transistors, with special emphasis on surface thermoelectric features of germanium. With Drs Gebbie and Branbury he discovered how to obtain the transistor action in lead sulphide. Similar results for lead selenide and lead telluride (measured at 77 K) were reported during the same period. This created quite a stir since all the original transistor efforts had been on germanium (with the promise of silicon) and there were all sorts of patent questions after his investigations were fully described at a large international conference on the Physics of Semiconductors held in July 1950 in Reading. Nobel Laureates Shockley and Brattain described this contribution a "good work". Reading was also a pleasant experience personally for him because he met his wife Audrey, then a lecture in Agricultural Bacteriology in the same University. After marriage, he moved to the Royal Radar Establishment in Malvern where he helped Professor Alan Gibson set up the transistor physics division. The group were joined by Dr Bill Bardsley, and Professor Iain Gunn, and then Professors Ted Paige and Ron Bell came to the division as research fellows. While at Malvern, he published 20 papers on PbTe, carrier injection in Ge, noise in Si filaments, dislocations in Si and Ge, optical properties of Si and set up what became a standard procedure for measuring the minority carrier life times of free charge carriers in Si and Ge.
机译：西里尔·阿尔弗雷德·霍加斯（Cyril Alfred Hogarth）教授（物理学，1948年，博士，1977年获得博士学位）通过他的开创性研究为氧化物半导体领域做出了重要贡献。他对氧化物材料的兴趣始于1946年，当时他与玛丽大学皇后学院的J. P.安德鲁斯教授一起攻读博士学位，当时的问题是确定CdO的热电势对环境氧气压力的依赖性。他的解决方案及其理论解释首先发表于《自然》（1948年1月），然后发表于《哲学》杂志（1948年4月）。在此期间，他还研究了NiO，ZnO和CuO的电荷传输和半导体性能。 1951年，已故的沃尔特·肖特基教授诞辰65周年。霍加斯教授当时是位年轻的科学家，但受“里伯·科勒格（Lieber Kollege）”的邀请，在Zeits fur Phys Chemie特刊上发表了他的一些氧化物研究成果，以表彰肖特基教授。这不仅是他的作品获得杰出的同行团体认可的时候。在1949年至1951年期间，他领导了雷丁大学的一个小组，研究晶体管的物理学，特别着重于锗的表面热电特性。他与Gebbie和Branbury博士一起发现了如何在硫化铅中获得晶体管的作用。在同一时期，硒化铅和碲化铅（在77 K下测量）的结果相似。这引起了极大的轰动，因为所有最初的晶体管工作都在锗（并承诺使用硅）上进行，并且在1950年7月举行的大型半导体物理国际会议上充分描述了他的研究之后，出现了各种各样的专利问题。在阅读中。诺贝尔奖获得者肖克利和布拉顿将这一贡献描述为“好作品”。对他个人而言，阅读也是一种愉快的经历，因为他遇到了妻子奥黛丽，然后在同一所大学进行了农业细菌学讲座。结婚后，他搬到了位于莫尔文的Royal Radar Establishment，在那里他帮助Alan Gibson教授成立了晶体管物理部门。该小组由Bill Bardsley博士和Iain Gunn教授组成，然后Ted Paige教授和Ron Bell教授作为研究人员来到了该部门。在Malvern期间，他发表了20篇论文，涉及PbTe，Ge中的载流子注入，Si丝中的噪声，Si和Ge中的位错，Si的光学性质，并建立了测量自由电荷载流子的少数载流子寿命的标准程序在硅和锗中。

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  • 作者

    Asim Ray;

  • 作者单位

    Queen Mary, University of London, Mile End Road, London E1 4NS, London E1 4NS, UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;
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