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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Structural, microstructural and dielectric studies of tin-doped barium niobate perovskite
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Structural, microstructural and dielectric studies of tin-doped barium niobate perovskite

机译：掺锡铌酸钡钙钛矿的结构，微观结构和介电研究

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摘要

Monophasic oxides of the type Ba(Nb_(1-x)Sn_(x)) O_(3) (0 <= x <= 1) have been synthesized by solid-state reaction method. All these compounds are found to have tetragonal structure except x velence 1. The cell parameters and their variation with composition x have been determined. The X-ray density is found to increase gradually with increase of dopant concentration. Tolerance factor and volume of unit cell was found to be almost constant for all the compositions. Scanning electron microscopy showed the presence of grains of approximately 1 (mu)m in size. Dielectric measurements in the frequency range 100 Hz to 1 MHz and in the temperature range from -100 deg C to 500 deg C has been carried out to determine the dielectric parameters. A strong frequency dependence of both dielectric constant (epsilon') and dielectric loss (D) is observed in the frequency range 100 Hz to 100 kHz. At low frequency, the piling up of mobile charge carriers at the grain boundary produces interfacial polarization giving rise to high dielectric constant. Dielectric loss showed a typical behaviour in the temperature and frequency range studied.
机译：通过固态反应法合成了Ba（Nb_（1-x）Sn_（x））O_（3）（0 <= x <= 1）类型的单相氧化物。发现所有这些化合物都具有x velence 1以外的四方结构。已经确定了细胞参数及其随组成x的变化。发现X射线密度随着掺杂剂浓度的增加而逐渐增加。对于所有组合物，发现容差因子和晶胞体积几乎恒定。扫描电子显微镜显示存在约1μm大小的晶粒。已经进行了在100 Hz到1 MHz的频率范围以及从-100摄氏度到500摄氏度的温度范围内的介电测量，以确定介电参数。在100 Hz至100 kHz的频率范围内，介电常数（ε）和介电损耗（D）都具有很强的频率依赖性。在低频下，移动电荷载流子在晶界的堆积会产生界面极化，从而导致高介电常数。介电损耗在所研究的温度和频率范围内表现出典型的行为。

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