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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Dielectric properties of doped polystyrene and polymethylmethacrylate
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Dielectric properties of doped polystyrene and polymethylmethacrylate

机译：掺杂的聚苯乙烯和聚甲基丙烯酸甲酯的介电性能

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About 1 (mu)m thick films of polystyrene (PS) and polymethylmethacrylate (PMMA) doped with diphenylsulfoxide (DS) up to 40 wt.percent were prepared from solutions using spin-coating method. Glass transition temperature (T_(g)) of doped polymer films was determined by DSC technique. The depth profile and surface concentration of DS dopant were measured by RBS and XPS methods, respectively. The temperature dependence of relative permittivity of the films was determined from capacitance measurement. The dependence of polarization (P) on electric field (E) was measured using a standard Sawyer-Tower circuit. The glass transition temperature T_(g) of both composites was found to be decreasing function of the DS concentration. The DS doping leads to an increase of relative permittivity of the PS and PMMA films. RBS and XPS measurements reveal an outward diffusion of DS dopant in PS/DS films at elevated temperature. No such effect was observed in PMMA/DS films. PMMA/DS layers were found to be more thermally stable comparing to PS/DS.
机译：使用旋涂法从溶液中制备约1μm厚的聚苯乙烯（PS）和掺杂有二苯亚砜（DS）的聚甲基丙烯酸甲酯（PMMA）最高40％（重量）的薄膜。通过DSC技术确定掺杂的聚合物膜的玻璃化转变温度（T_（g））。 DS掺杂剂的深度分布和表面浓度分别通过RBS和XPS方法进行测量。膜的相对介电常数的温度依赖性通过电容测量来确定。使用标准的Sawyer-Tower电路测量极化（P）对电场（E）的依赖性。发现两种复合物的玻璃化转变温度T_（g）是DS浓度的降低函数。 DS掺杂导致PS和PMMA膜的相对介电常数增加。 RBS和XPS测量显示，在高温下，DS掺杂剂在PS / DS膜中向外扩散。在PMMA / DS膜中未观察到这种效果。发现与PS / DS相比，PMMA / DS层具有更高的热稳定性。

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