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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Effect of ramping-up rate on film thickness for spin-on processing
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Effect of ramping-up rate on film thickness for spin-on processing

机译：加速速率对旋涂工艺中膜厚度的影响

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Spin-on processing is used in many industries to deposit very thin coatings on flat substrates, including silicon wafers, flat-panel displays, and precision optical components. A liquid precursor solution is first dispensed onto the surface of the substrate; this fluid then spreads out very evenly over the surface due to large rotational forces caused by spinning of the substrate. When looking for an optimum coating procedure process engineers can adjust many variables including the peak spin speed, the ramping rate to reach that speed, the spinning time, as well as allowing for dynamic solution dispense before ramping up, though most protocols focus on the peak spin speed as the primary controlling variable. Engineers often construct spin-speed versus thickness correlations that enable predictable adjustment of spin-speed to achieve a desired thickness. Yet, rather little attention has been paid to the importance of the acceleration rate used to reach the desired peak speed. We show here that ramping rate is also important in helping establish the final coating thickness. We present a numerical model of the fluid flow on a spinning wafer when the spin-speed is ramping linearly up to a desired peak speed and then held constant. It is shown that the coating may "set" into its final thickness before the spin-speed reaches its peak value. In these cases then the peak spin-speed parameter is no longer the primary variable that defines the final coating thickness. This also impacts the interpretation of critical exponents found when fitting spin-speed vs. thickness data. We perform parallel experimental measurements for different ramping-up times and confirm the results from the numerical model. Both experimental and theoretical results support use of the simplified model put forth by Meyerhofer over 25 years ago (J. Appl. Phys. 49 (1978) 3993-3997).
机译：旋涂工艺在许多行业中用于在平板基板上沉积非常薄的涂层，包括硅晶片，平板显示器和精密光学组件。首先将液态前体溶液分配到基材表面上；由于基片旋转而产生的巨大旋转力，这种流体然后会非常均匀地散布在整个表面上。当寻找最佳的涂布程序时，工艺工程师可以调整许多变量，包括峰值纺丝速度，达到该速度的斜率，纺丝时间以及在斜率前动态分配溶液，尽管大多数方案都将重点放在峰值上。旋转速度作为主要控制变量。工程师通常会构建自旋速度与厚度的关系，从而可以对自旋速度进行可预测的调整，以实现所需的厚度。但是，很少有人关注用于达到所需峰值速度的加速度的重要性。我们在这里表明，升温速率对于帮助确定最终涂层厚度也很重要。当旋转速度线性上升到所需的峰值速度然后保持恒定时，我们给出了旋转晶片上流体流动的数值模型。结果表明，在旋转速度达到峰值之前，涂层可能会“凝固”成最终厚度。在这些情况下，峰值自旋速度参数不再是定义最终涂层厚度的主要变量。这也影响了在拟合自旋速度与厚度数据时发现的关键指数的解释。我们针对不同的加速时间执行并行实验测量，并确认数值模型的结果。实验和理论结果均支持使用Meyerhofer于25年前提出的简化模型（J. Appl。Phys。49（1978）3993-3997）。

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