...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of materials science >High-performance zinc antimonide thermoelectric thin films achieved by a layer-by-layer combination reaction approach
【24h】

High-performance zinc antimonide thermoelectric thin films achieved by a layer-by-layer combination reaction approach

机译：高性能锌锑苷酸热电薄膜通过层逐层组合反应方法实现

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Zinc antimonide (Zn-Sb) is considered as a good candidate to replace the traditional TE materials due to its low cost, non-toxic, and high abundance of elements. In this work, layer-by-layer thin films were fabricated by sputtering Zn on the Sb precursor layer with a magnetron sputtering method, and an annealing process is performed on thin films to engage a self-assembled growth of Zn-Sb films. It is found that Zn-Sb film with good crystallinity was obtained after annealing at 300 °C for 10 min. Then, the influence of Zn layer thickness and annealing time on the structural, compositional, and thermoelectric properties for the Zn-Sb thin films were investigated. As a result, the thin film with mixed Zn_4Sb_3/ZnSb phases achieved a high power factor of 3.42 μWcm~(-1) K~(-2) when the Zn layer thickness was 600 nm. Additionally, the power factor was further optimized to 3.80 μWcm~(-1) K~(-2) after prolonging the annealing time up to 15 min.
机译：锌锑（Zn-Sb）被认为是替代传统TE材料的良好候选者，因为其低成本，无毒和高丰度元件。在该作品中，通过用磁控溅射方法溅射Zn，通过溅射Zn制造层逐层薄膜，并且在薄膜上进行退火过程，以接合Zn-Sb膜的自组装生长。发现在300℃下退火10分钟后获得具有良好结晶度的Zn-Sb膜。然后，研究了Zn-SB薄膜对结构，组成和热电性质对Zn-SB薄膜的影响的影响。结果，当Zn层厚度为600nm时，具有混合Zn_4SB_3 / ZnSB / ZnSB阶段的薄膜实现了3.42μWcm〜（-1）k〜（-2）的高功率因数。另外，在延长退火时间至15分钟后，功率因数进一步优化至3.80μWcm〜（-1）k〜（-2）。

著录项

  • 来源
    《Journal of materials science》 |2020年第19期|16968-16974|共7页
  • 作者

    Zhuang-hao Zheng; Dong Yang; Xiao-Ian Huang; Fu Li; Yue-Xing Chen; Guang-xing Liang; Jing-ting Luo; Ping Fan;

  • 作者单位

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号