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首页> 外文期刊>Journal of materials science >Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature
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Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature

机译：在室温下对0.1和1MHz不同掺杂浓度的介电性能对0.1和1MHz的介电性能的研究

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摘要

In order to improve and detailedly investigate the dielectric properties of polymer interfaces of Metal-Polymer-Semiconductor (MPS) structures, three types of MPS were fabricated by doping 1, 3 and 5% graphene (Gr) into the poly vinyl alcohol (PVA) interface material. Capacitance-Voltage (C-V) and Conductance-Voltage (G/ω-V) measurements were used to analyze the dielectric properties of three types of MPS. Using C-V and G/co-V data, series resistance (R_s) affecting device performance and interface properties besides basic dielectric parameters of each structure such as both the real and imaginary components of complex dielectric constant ε' and ε"), complex electrical modulus (M' and M"), loss tangent (tanδ), and ac electrical conductivity (σ_(ac)) were also calculated. The effect of graphene doping was examined for each parameter and obtained results were compared at both low (0.1 MHz) and high (1 MHz) frequencies. It was observed that e and e" decreased with increasing graphene doping at both 0.1 and 1 MHz, while M' and M" increased under same conditions. Moreover, both the M' and M" vs V plots have two distinctive peaks between -2.0 V and 0.0 V due to a special density distribution of surface states between (Gr-PVA) and p-Si. The tan5 gradually increased with increasing graphene doping at only 0.1 MHz. As the doping ratio of graphene increases, the charge carriers in the structure generate more dipoles and create an earlier relaxation process. In other words, increasing the doping ratio helps to improve the series resistance effects in MPS structures. As a result, it was seen that the interfacial properties of MPS structures were improved by increasing the rate of graphene doping.
机译：为了改善和详细地研究金属 - 聚合物 - 半导体（MPS）结构的聚合物界面的介电性能，通过将三种类型的MPS通过掺杂1,3和5％石墨烯（GR）加入聚乙烯醇（PVA）中制造界面材料。电容 - 电压（C-V）和电导 - 电压（G /ω-V）测量用于分析三种类型的MPS的电介质特性。使用CV和G / CO-V数据，串联电阻（R_S）影响设备性能和接口属性，除了每个结构的基本介电参数之外，例如复杂介电常数ε'和ε“）的实数和虚部”），复合电模量（M'和M“），还计算了损耗切线（Tanδ）和交流电导率（Σ_（AC））。检查石墨烯掺杂的效果，对每个参数进行检查，并在低（0.1MHz）和高（1MHz）频率下进行得到的结果。观察到E和E“随着0.1和1MHz两者的石墨烯掺杂而降低，而M'和M”在相同条件下增加。此外，由于（GR-PVA）和P-Si之间的表面状态的特殊密度分布，M'和M“Vs Vs Vs Vs Vs Vs Vs Vs Vs Vs Vs VS Vs Plots在-2.0V和0.0V之间具有两个独特的峰。Tan5随着石墨烯的增加逐渐增加仅以0.1MHz掺杂。随着石墨烯的掺杂比增加，结构中的电荷载体产生更多的偶极子并产生早期的弛豫过程。换句话说，增加掺杂比有助于提高MPS结构中的串联电阻效应。如结果，看来通过增加石墨烯掺杂速率来提高MPS结构的界面性质。

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  • 来源
    《Journal of materials science》 |2020年第19期|16324-16331|共8页
  • 作者

    Guelcin Ersoez Demir; ibrahim Yuecedag; Semsettin Altindal;

  • 作者单位

    Department of Management Information Systems Faculty of Management Selcuk University 42700 Konya Turkey;

    Department of Computer Engineering Technology Faculty Duezce University 81620 Duezce Turkey;

    Department of Physics Faculty of Science Gazi University 06500 Ankara Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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