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首页> 外文期刊>Journal of materials science >Preparation, electrical, thermal and mechanical properties of black lithium tantalate crystal wafers
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Preparation, electrical, thermal and mechanical properties of black lithium tantalate crystal wafers

机译：黑色锂钽酸盐晶晶晶片的制备，电气，热和力学性能

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摘要

In this work, the effect of surface reduction treatment on the electrical, thermal and mechanical properties of Lithium tantalate (LiTaO_3 LT) crystal wafers was investigated by comparing congruent Lithium tantalate (CLT) crystal wafers with deep-reduction black Lithium tantalate (BLT) crystal wafers using a mixture of high-purity aluminium powder and silicon powder as reducing agents. The structural changes of reduced wafers are discussed by XRD. The electrical conductivity of BLT wafers is 6.27 × 10~(-12) (Ω cm)~(-1), which is four orders of magnitude higher than the CLT crystal wafers. The Curie temperature and the thermal stability are basically the same with CLT crystal wafers, and the specific heat and hardness are reduced. The data show that high temperature annealing before reduction is conducive to the stress release of CLT crystal wafers, the blackening effect is more easily achieved, and the treated BLT wafer is more anti-static. The results show that the reduction treatment can obviously improve the conductivity of the wafer, so it is easier to improve and eliminate the discharge phenomenon caused by pyroelectric effects in the process of device preparation.
机译：在这项工作中，通过将一致钽酸盐（CLT）晶晶片与深减速的黑色锂钽酸盐（BLT）晶体进行比较，研究了表面还原处理对钽酸锂（LiTaO_3 LT）晶晶片的电气，热和机械性能的影响使用高纯度铝粉和硅粉的混合物作为还原剂的晶片。 XRD讨论了减少晶片的结构变化。 BLT晶片的电导率为6.27×10〜（-12）（ωcm）〜（-1），这比CLT晶晶片高四个数量级。居里温度和热稳定性与CLT晶晶片基本相同，并且特定的热量和硬度降低。数据显示，在还原前的高温退火有利于CLT晶晶片的应力释放，更容易实现黑化效果，并且处理过的BLT晶片更抗静电。结果表明，减少处理可以明显提高晶片的电导率，因此更容易改善并消除在设备制备过程中的热电效应引起的放电现象。

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  • 来源
    《Journal of materials science》 |2020年第19期|16414-16419|共6页
  • 作者

    Xuefeng Xiao; Huan Zhang; Xuefeng Zhang;

  • 作者单位

    Key Laboratory of Physics and Photoelectric Information Functional Materials Sciences and Technology North Minzu University. Yinchuan 750021 China College of Electric and Information Engineering North Minzu University Yinchuan 750021 China Ningxia Ju Jing Yuan Crystal Technology Company Limited Shizuishan 753000 China;

    Key Laboratory of Physics and Photoelectric Information Functional Materials Sciences and Technology North Minzu University. Yinchuan 750021 China College of Electric and Information Engineering North Minzu University Yinchuan 750021 China;

    Key Laboratory of Physics and Photoelectric Information Functional Materials Sciences and Technology North Minzu University. Yinchuan 750021 China Ningxia Ju Jing Yuan Crystal Technology Company Limited Shizuishan 753000 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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