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首页> 外文期刊>Journal of materials science >Electrical properties and temperature stability of high T_c/T_(R-T) Pb(In_(1/2)Nb_(1/2)O_3-Pb(Zn_(1/3)Nb_(2/3)O_3-PbTiO_3 piezoelectric ceramics with compositions near the morphotropic phase boundary
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Electrical properties and temperature stability of high T_c/T_(R-T) Pb(In_(1/2)Nb_(1/2)O_3-Pb(Zn_(1/3)Nb_(2/3)O_3-PbTiO_3 piezoelectric ceramics with compositions near the morphotropic phase boundary

机译：高T_C / T_（RT）PB的电气性能和温度稳定性（IN_（1/2）NB_（1/2）O_3-PB（Zn_（1/3）Nb_（2/3）O_3-PBTIO_3压电陶瓷，其中组合物在Morphotropic相位边界附近

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摘要

Three sets of ternary ceramics in the compositions of 0.35Pb(In_(1/2)Nb_(1/2)O_3-Pb((Zn_(1/3)Nb_(2/3))O_3PbTiO_3 (y = 0.22-0.29), 0.40Pb(In_(1/2)Nb_(1/2)O_3 (0.60-y)Pb((Zn_(1/3)Nb_(2/3))O_3-yPbTiO_3 (y = 0.24-0.32), and 0.50Pb(In_(1/2)Nb_(1/2)O_3-(0.50-y)Pb((Zn_(1/3)Nb_(2/3))O_3-yPbTiO_3 (y = 0.27-0.37) near the morphotropic phase boundary (MPB) were fabricated by a two-step solid-phase synthesis route. The structure, electrical properties, and temperature stability of piezoelectric ceramics were studied. Structural analysis revealed that all ceramics exhibited pure perovskite phase and dense microstructure. In our chosen compositions, the maximum piezoelectric coefficient d_(33) = 589 pC/N and electromechanical coupling factor k_p = 0.59 are presented for 0.35PIN-0.40PZN-0.25PT, the highest rhombohedral to tetragonal phase transformation temperature T_(R-T) on the order of 187°C is observed in the 0.50PIN-0.23PZN-0.27PT composition with a Curie temperature T_c = 269 °C, 0.40PIN-0.33PZN-0.27PT, and 0.40PIN-0.32PZN-0.28PT ceramics do not depolarize at temperatures up to 230 °C. Considering the relatively high T_c (255°C), d_(33) (523 pC/N) and good thermal stability, 0.40PIN-0.33PZN-0.27PT is very promising for high-temperature piezoelectric applications. On this basis, a property-composition diagram around MPB in PIN-PZN-PT system was also established.
机译：三组三元陶瓷在0.35pb的组合物中（IN_（1/2）Nb_（1/2）O_3-PB（（zn_（1/3）nb_（2/3））O_3Pbtio_3（y = 0.22-0.29） ，0.40pb（IN_（1/2）NB_（1/2）O_3（0.60-y）Pb（（zn_（1/3）nb_（2/3））O_3-ypbtio_3（y = 0.24-0.32），和0.50pb（IN_（1/2）NB_（1/2）O_3-（0.50-Y）PB（（Zn_（1/3）NB_（2/3））O_3-YPBTIO_3（Y = 0.27-0.37）附近通过两步固相合成途径制造了Morphotopic相位边界（MPB）。研究了压电陶瓷的结构，电性能和温度稳定性。结构分析表明，所有陶瓷都表现出纯钙钛矿相和致密的微观结构。在我们的选择的组合物，最大压电系数d_（33）= 589cc / n和机电耦合因子K_p = 0.59呈现0.35pin-0.40pzn-0.25pt，最高的菱形到四边形相变温度T_（RT）上的顺序在0.50pIn-0.23pzn-0.27pt的组合物中观察到187℃，居里温度t_c = 269℃，0.40pin-0.33pz N-0.27pt，0.40pIn-0.32pzn-0.28pt陶瓷在高达230℃的温度下不偏振。考虑到相对高的T_C（255°C），D_（33）（523）（523pc / N）和良好的热稳定性，0.40pin-0.33pzn-0.27pt对于高温压电应用非常有前途。在此基础上，还建立了PIN-PZN-PT系统中的MPB周围的物业组合图。

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  • 来源
    《Journal of materials science》 |2020年第22期|20411-20422|共12页
  • 作者

    Tingting Wang; Kexin Song; Zhenrong Li;

  • 作者单位

    Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China;

    Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China;

    Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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