Effect of Gd and Si co-doping on the band alignment and electrical properties of HfO_2 dielectric films prepared by atomic layer deposition

Lin Zhu; Xiao-Jie Liu; Yan-Qiang Cao; Ai-Dong Li; Di Wu

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Effect of Gd and Si co-doping on the band alignment and electrical properties of HfO_2 dielectric films prepared by atomic layer deposition

机译：GD和Si共掺杂对原子层沉积制备的HFO_2介电膜的带对准和电性能的影响

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Gd and Si co-doped HfO_2 gate dielectric thin films were prepared by atomic layer deposition (ALD), while Gd[N(SiMe_3)_2]_3, Hf[NEtMe]_4, and H_2O are chosen to be precursors. The Gd and Si were successfully co-doped into HfO_2 films using only one doping precursor Gd[N(SiMe_3)_2]_3. The doping concentration can be facilely tuned by controlling ALD recipe. The atomic percentages of Si/(Si + Gd + Hf) and Gd/(Si + Gd + Hf) increase from 11.5 to 28.9% and from 6.8 to 28.4% when changing the ALD cycle ratio of Gd_xSi_yO to HfO_2 from 1:9 to 1:1. The band gap and band alignment were investigated by X-ray photoelectron spectroscopy. The results imply that the band gap of Gd/Si co-doped HfO_2 films has a positive relation with doping concentration. Moreover, the valence band offset decreases with doping concentration first but then increases, while the change of conduction band offset is opposite. The (1:6)-Hf_xGd_ySi_zO films with 11.6 at.% Gd/(Gd + Hf) exhibit the maximum accumulation capacitance and dielectric constant, which are only slightly smaller than those of the HfO_2 films. Compared to HfO_2 films, the leakage current density of (1:6)-Hf_xGd_ySi_zO films is decreased by at least one order of magnitude. Therefore, Gd and Si co-doping can improve the electrical properties of HfO_2 films.

机译：通过原子层沉积（ALD）制备Gd和Si共掺杂HFO_2栅极介电薄膜，而GD [n（SIME_3）_2] _3，HF [Netme] _4和H_2O被选择为前体。使用一种掺杂前体Gd [n（sime_3）_2] _3，Gd和Si成功掺杂到HFO_2膜中。通过控制ALD配方可以施用掺杂浓度。当将GD_XSI_yo至HFO_2的ALD循环比从1：9改变为HFO_2时，Si /（Si + Gd + HF）和Gd /（Si + Gd + Hf）的原子百分比从11.5％增加到28.9％和6.8％至28.4％ 1：1。通过X射线光电子能谱研究带隙和带对准。结果意味着GD / Si共掺杂HFO_2膜的带隙与掺杂浓度有阳性关系。此外，价带偏移首先用掺杂浓度降低，但随后增加，而导电带偏移的变化相反。（1：6）-hf_xgd_ysi_zo薄膜，11.6 at。％gd /（gd + hf）表现出最大累积电容和介电常数，其仅略小于HFO_2薄膜。与HFO_2薄膜相比，（1：6）-HF_XGD_YSI_ZO薄膜的漏电流密度至少减少了至少一种数量级。因此，Gd和Si共掺杂可以改善HFO_2膜的电性质。

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来源
《Journal of materials science》 |2021年第4期|4815-4822|共8页
作者
Lin Zhu; Xiao-Jie Liu; Yan-Qiang Cao; Ai-Dong Li; Di Wu;
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作者单位

National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials Materials Science and Engineering Department College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;

National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials Materials Science and Engineering Department College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;

National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials Materials Science and Engineering Department College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;

National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials Materials Science and Engineering Department College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;

National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials Materials Science and Engineering Department College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Effect of Gd and Si co-doping on the band alignment and electrical properties of HfO_2 dielectric films prepared by atomic layer deposition

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