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首页> 外文期刊>Journal of materials science >The influence of YSZ interlayer on microstructures and dielectric properties of BST thin films prepared by RF magnetron sputtering
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The influence of YSZ interlayer on microstructures and dielectric properties of BST thin films prepared by RF magnetron sputtering

机译：YSZ中间层对射频磁控溅射制备的BST薄膜的微观结构和介电性能的影响

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摘要

(Ba_(1-x)Sr_x)TiO_3 (BST) thin films were deposited on Pt/Ti/SiO_2/Si and YSZ/Pt/Ti/SiO_2/Si substrates by radio frequency (RF) magnetron sputtering. The influence of YSZ interlayer on microstructures and dielectric properties of BST thin films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy and dielectric frequency spectra. It was found that the preferred orientation of BST thin films could be tailored by insertion of YSZ interlayer and adjusting the thickness of YSZ interlayer. The BST thin films deposited on YSZ interlayer exhibited a more compact and uniform grain structure than that deposited directly on Pt electrode. Dielectric measurement revealed that the BST thin films deposited on 10 nm YSZ interlayer have the largest dielectric constant and a low dielectric loss tangent. The enhanced dielectric behavior is mainly attributed to the YSZ interlayer which serves as an excellent seeding layer to enhance the crystallization of subsequent BST films layer, and a smaller thermal stress field built up at the interface between YSZ interlayer and BST film layer.
机译：（Ba_（1-x）Sr_x）TiO_3（BST）薄膜通过射频（RF）磁控溅射法沉积在Pt / Ti / SiO_2 / Si和YSZ / Pt / Ti / SiO_2 / Si衬底上。通过X射线衍射，原子力显微镜，扫描电镜和介电谱研究了YSZ中间层对BST薄膜结构和介电性能的影响。已经发现，可以通过插入YSZ中间层并调节YSZ中间层的厚度来调整BST薄膜的优选取向。与直接沉积在Pt电极上的BST薄膜相比，沉积在YSZ中间层上的BST薄膜显示出更致密和均匀的晶粒结构。介电测量表明，沉积在10 nm YSZ中间层上的BST薄膜具有最大的介电常数和低的介电损耗角正切值。介电性能的提高主要归因于YSZ中间层，该中间层用作增强后续BST薄膜层结晶的优良晶种层，并且在YSZ中间层和BST薄膜层之间的界面处形成的热应力场较小。

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