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首页> 外文期刊>Journal of Materials Science >Tunable surface hardness and dielectric constant of SiC x O y thin film converted from solution-processed organosilicon compound
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Tunable surface hardness and dielectric constant of SiC x O y thin film converted from solution-processed organosilicon compound

机译：固溶有机硅化合物转化成SiC x y 薄膜的可调表面硬度和介电常数

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摘要

Decaphenylcyclopentasilane (DPCPS), a solution-processable precursor, was used to develop inorganic thin films with variable electromechanical properties in terms of their surface hardness and dielectric constant through thermal treatment. By varying the thermal treatment temperature and environmental conditions, the organic covalent bonds in DPCPS disappeared via various chain scission reactions and, consequently, an SiC x O y hard-surface coating was achieved by the orbital hybridization of carbon and silicon. The inorganic thin film developed at thermal treatment temperatures over 700 °C in this study reached a pencil hardness of 7H and dielectric constant of around 2.3–2.5, which is lower than that of silica, seemingly because of the carbon atoms incorporated in the atomic lattice structure of SiO2. The thermal treatment in an air environment gave higher dielectric constants than that in argon at 700 °C, but the ultimate dielectric constants after thermal treatment at temperatures over 700 °C were similar in both environments.
机译：十苯基环戊硅烷（DPCPS）是一种可溶液处理的前体，用于通过热处理开发具有可变机电性能的无机薄膜，这些薄膜的表面硬度和介电常数均不相同。通过改变热处理温度和环境条件，DPCPS中的有机共价键通过各种断链反应而消失，因此，通过与CPC的轨道杂交获得了SiC x y 硬表面涂层。碳和硅。在这项研究中，在超过700°C的热处理温度下开发的无机薄膜达到了7H的铅笔硬度和约2.3–2.5的介电常数，低于二氧化硅的介电常数，这似乎是由于原子晶格中包含了碳原子的结构在空气环境中进行的热处理比<700°C的氩气具有更高的介电常数，但是在超过700°C的温度下进行热处理后的最终介电常数在两种环境中相似。

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  • 来源
    《Journal of Materials Science》 |2012年第11期|p.4540-4545|共6页
  • 作者

    Pyoung-Chan Lee; Sieun Kim; Taeseon Hwang; Joon-Suk Oh; Yong-Soo Oh; Lyongsun Pu; Byung-Woo Kim; Youngkwan Lee; Hyouk Ryeol Choi; Sun Kyoung Jeoung; Jae-Do Nam;

  • 作者单位

    Materials and Components R&ampD Division, Korea Automotive Technology Institute, Pungse-Myun, Chonan-Si, 330-912, South Korea;

    Department of Polymer Science and Engineering, SAINT, Sungkyunkwan University, Suwon, 440-746, South Korea;

    Department of Polymer Science and Engineering, SAINT, Sungkyunkwan University, Suwon, 440-746, South Korea;

    Department of Polymer Science and Engineering, SAINT, Sungkyunkwan University, Suwon, 440-746, South Korea;

    Central R&ampD Institute, Samsung Electro-Mechanics Co. Ltd, Maetan-dong, Yeongtong-gu, Suwon, 443-743, South Korea;

    Department of Polymer Science and Engineering, SAINT, Sungkyunkwan University, Suwon, 440-746, South Korea;

    Department of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea;

    Department of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea;

    Department of Mechanical Engineering, Sung;

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