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首页> 外文期刊>Journal of Materials Science >Dislocation motion in the early stages of high-temperature low-stress creep in a single-crystal superalloy with a small lattice misfit
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Dislocation motion in the early stages of high-temperature low-stress creep in a single-crystal superalloy with a small lattice misfit

机译：晶格失配小的单晶高温合金中高温低应力蠕变早期的位错运动

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摘要

Dislocation configurations at different creep stages (1100 °C and 137 MPa) in a superalloy TMS-75(+Ru) were studied in transmission electron microscopy (TEM) and the movement path of these creep-produced dislocations could be fully illustrated. Due to the small value of γ/γ′ lattice misfit, these dislocations cannot glide in the horizontal γ matrix channels by cross slip, but they mainly move by climbing around the γ′ cuboids. In the primary stage, the dislocations first move by slip in the γ-matrix channels. When they reach the γ′ cuboids, they move by climbing along the γ′ cuboid surfaces. In the secondary creep stage, dislocation reorientation in the (001) interfacial planes happens slowly, away from the deposition orientation of 〈110〉 to the misfit orientation of 〈100〉. The velocity of the reorientation is lower and a perfect γ/γ′ interfacial dislocation network cannot be formed quickly. This factor results in a large creep rate of the alloy during the secondary creep stage. The path for dislocation motion during the early creep stages consists of the following sequences: (i) climbing along the γ′ cuboid surface, (ii) deposition onto the (001) γ/γ′ interfacial plane, and (iii) reorientation from the 〈110〉 direction to the 〈100〉 direction.
机译：在透射电子显微镜（TEM）中研究了高温合金TMS-75（+ Ru）在不同蠕变阶段（1100°C和137 MPa）下的位错构型，并可以充分说明这些蠕变产生的位错的运动路径。由于γ/γ'晶格失配的值很小，这些位错无法通过横向滑移在水平γ矩阵通道中滑动，而是主要通过绕γ'长方体移动而移动。在初级阶段，位错首先在γ矩阵通道中滑移。当它们到达γ'长方体时，它们会沿着γ'长方体表面爬升而移动。在第二蠕变阶段，（001）界面平面上的位错重新取向缓慢发生，从〈110〉的沉积方向变为〈100〉的失配方向。重新定向的速度较低，不能快速形成理想的γ/γ'界面错位网络。该因素导致在二次蠕变阶段合金的大蠕变速率。在蠕变早期阶段，位错运动的路径包括以下顺序：（i）沿γ'长方体表面爬升；（ii）沉积在（001）γ/γ'界面上，以及（iii）从〈110〉方向指向〈100〈方向。

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