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首页> 外文期刊>Journal of Materials Science >Investigation of PbZr0.4Ti0.6O3 capacitors with room temperature as-grown LaNiO3 electrodes
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Investigation of PbZr0.4Ti0.6O3 capacitors with room temperature as-grown LaNiO3 electrodes

机译：室温生长的LaNiO3 电极的PbZr0.4 Ti0.6 O3 电容器的研究

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摘要

LaNiO3 (LNO) film grown at room temperature (RT) by RF magnetron sputtering is used as the electrode for integrating LaNiO3/PbZr0.4Ti0.6O3/LaNiO3 (LNO/PZT/LNO) capacitor on SrTiO3 (STO) substrate. For comparison, LNO film grown at 250 °C is also used as the electrode of PZT capacitor. Reflection high energy electron diffraction (RHEED) technique is used to characterize the LNO film, it is found that LNO film prepared at 250 °C is epitaxial although no diffraction pattern is found for RT as-grown LNO. Ferroelectric properties of PZT films strongly depend on the LNO bottom electrodes. The remanent polarization (P r) and coercive voltage (V c), measured at 5 V, for the capacitors with LNO bottom electrodes prepared at RT and 250 °C, are 20 and 37 μC/cm2, 1.67 and 1.95 V, respectively. No obvious degradation of polarization for PZT capacitors with RT as-grown LNO electrodes can be found. Room temperature as-grown LNO as both bottom and top electrodes to fabricate ferroelectric capacitors can save 2/3 thermal budgets, which may pay a way to decrease the potential challenges of devices resulting from the oxidation, interdiffusion or reactions during integrating ferroelectric capacitors with Si technologies.
机译：射频（RF）磁控溅射在室温下生长的LaNiO3 （LNO）膜用作集成LaNiO3 /PbZr0.4 Ti0.6 O3 的电极SrTiO3 （STO）基板上的sub> / LaNiO3 （LNO / PZT / LNO）电容器。为了比较，在250°C下生长的LNO膜也用作PZT电容器的电极。使用反射高能电子衍射（RHEED）技术表征LNO膜，发现在250°C下制备的LNO膜是外延的，尽管未发现RT生长的LNO的衍射图。 PZT膜的铁电性能在很大程度上取决于LNO底部电极。在RT和250°C下制备的带有LNO底部电极的电容器在5 V下测得的剩余极化（P r ）和矫顽电压（V c ）为20和37μC/ cm2 ，1.67和1.95V。对于带有RT生长的LNO电极的PZT电容器，没有发现极化的明显降低。室温下生长的LNO作为底部和顶部电极来制造铁电电容器可节省2/3的热预算，这可能是减少铁电电容器与Si集成过程中因氧化，相互扩散或反应而引起的器件潜在挑战的一种方式。技术。

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  • 来源
    《Journal of Materials Science》 |2007年第16期|6956-6960|共5页
  • 作者

    B. T. Liu; F. Li; C. S. Cheng; D. Q. Wu; X. B. Yan; F. Bian; Z. Yan; Q. X. Zhao; X. Y. Zhang;

  • 作者单位

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    College of Physics Science ampamp Technology Hebei University Baoding Hebei 071002 China;

    Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao Hebei 066004 China;

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