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Faceting of the Σ 3 coincidence tilt boundary in Nb

机译:Nb中Σ3重合倾斜边界的分面

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摘要

Due to their unusual properties, the grain boundaries (GBs) with the lowest possible inverse density of coincidence sites Σ = 3 play a special role in the GB engineering. The as-grown shape of the cylindric tilt grain boundary (GB) in Nb bicrystal grown by the floating zone method has been studied with the electron back-scattering diffraction method. Both grains form the superlattice called coincidence site lattice (CSL) with the lowest possible inverse density of coincidence sites Σ = 3. Four different CSL facets (100)Σ3CSL, 110Σ 3CSL, 120Σ 3CSL and 210Σ3CSL were observed simultaneously. Flat facets (100)Σ3CSL, 110Σ3CSL, 120Σ3CSL and 210Σ3CSL form smooth edges (no slope discontinuity) with rounded rough GB portions. Rough surface curves away from the plane of the (–1, 2, 0)Σ3CSL facet at the edge with (–1, 1, 0)Σ3CSL facet as x β with β = 1.61 ± 0.09. At the edge between (210)Σ3CSL and (–1, 2, 0)Σ3CSL facets β = 1.46 ± 0.09. Both values reveal the GB roughening belonging to the Pokrovsky-Talapov universality class. It has been shown for Pb surfaces [K. Arenhold, S. Surnev, P. Coenen, H.P. Bonzel and P. Wynblatt, Surf. Sci. 417 (1998) L1160] that the β value depend on the details of the steps interaction at the vicinal surface. In our case the difference between measured β for two different facet edges can be due to the similar details of GB steps.
机译:由于其非同寻常的特性,具有最低重合位点Σ= 3的逆密度的晶界(GBs)在GB工程中起着特殊的作用。利用电子背散射衍射方法研究了通过浮区法生长的Nb双晶中圆柱倾斜晶界(GB)的生长形状。这两个晶粒都形成了称为重合点阵(CSL)的超晶格,重合点的逆密度最低,Σ=3。四个不同的CSL面(100)Σ3CSL,110Σ3CSL ,120Σ3CSL 和210Σ3CSL。平面(100)Σ3CSL,110Σ3CSL,120Σ3CSL和210Σ3CSL形成具有圆滑的粗糙GB部分的平滑边缘(没有坡度不连续性)。粗糙曲面在(–1、1、0)Σ3CSL小平面的边缘处远离(–1、2、0)Σ3CSL小平面的平面,x为β = 1.61±0.09。在(210)Σ3CSL和(–1、2、0)Σ3CSL小平面之间的边缘β= 1.46±0.09。这两个值都揭示了属于Pokrovsky-Talapov通用性类的GB粗糙化。它已经显示在铅表面[K. Arenhold,S.Surnev,P.Coenen,H.P。 Bonzel和P.Wynblatt,冲浪。科学[417(1998)L1160]中,β值取决于在邻近表面的台阶相互作用的细节。在我们的案例中,对于两个不同的小平面边缘,测得的β之间的差异可能归因于GB步骤的相似细节。

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  • 来源
    《Journal of Materials Science》 |2005年第4期|871-874|共4页
  • 作者单位

    Russian Academy of Sciences 142432 Chernogolovka Institute of Solid State Physics;

    Russian Academy of Sciences 142432 Chernogolovka Institute of Solid State Physics;

    Russian Academy of Sciences 142432 Chernogolovka Institute of Solid State Physics;

    Laboratory of Materials Design and Interface Engineering Department of Machine Intelligence and Systems Engineering Graduate School of Engineering Tohoku University;

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