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首页> 外文期刊>Journal of Materials Science >Chemical synthesis and compositional analysis of mixed [Mo(S1 − x Se x )2] semiconductor thin films
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Chemical synthesis and compositional analysis of mixed [Mo(S1 − x Se x )2] semiconductor thin films

机译:[Mo(S1-x Se x )2 ]混合半导体薄膜的化学合成和组成分析

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摘要

The synthesis of binary MoS2, MoSe2 and mixed [Mo(S1 − x Sex)2] thin films onto a glass substrates using arrested precipitation technique (APT) is presented in this investigation. Growth kinetics and mechanism of film formation were studied for these films and are explained in brief. The stoichiometry of the film is confirmed by analyzing films using Extractive spectrophotometric (ESP), atomic absorption spectroscopic (AAS) and electron difftraction X-ray microanalysis (EDAX) techniques. The semiconductor solution containing Mo(VI) and Se(IV) is extracted with N-n-octylaniline in xylene and determined by ESP, AAS and EDAX techniques. Further these films are characterized for its semiconducting behavior to test the suitability of molybdenum chalcogenides as a photoelectrode to convert radiant energy into electricity. It is found that stoichiometry of the film formed by our recently developed arrested precipitation technique (APT) has strong influence on photoconduction in molybdenum chalcogenide photoelectrodes.
机译:提出了利用沉积沉淀技术(APT)在玻璃基板上合成二元MoS2 ,MoSe2 和混合[Mo(S1-x Sex)2 ]薄膜的方法。在这次调查中。研究了这些薄膜的生长动力学和成膜机理,并作了简要说明。通过使用萃取分光光度法(ESP),原子吸收光谱法(AAS)和电子扩散X射线微分析(EDAX)技术分析薄膜来确认薄膜的化学计量。用二甲苯中的N-正辛基苯胺萃取含Mo(VI)和Se(IV)的半导体溶液,并通过ESP,AAS和EDAX技术进行测定。此外,这些薄膜还具有半导体性能,可测试硫族钼化物作为光电极将辐射能转化为电能的适用性。发现通过我们最近开发的阻滞沉淀技术(APT)形成的薄膜的化学计量对硫族钼化物光电极中的光电导有很大影响。

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  • 来源
    《Journal of Materials Science》 |2004年第5期|1659-1664|共6页
  • 作者单位

    Shivraj College;

    Materials Research Laboratory Department of Chemistry Shivaji University;

    Materials Research Laboratory Department of Chemistry Shivaji University;

    Materials Research Laboratory Department of Chemistry Shivaji University;

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  • 正文语种 eng
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