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首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning
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Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning

机译：交替材料自对准多重构图的工艺开发和边缘放置良率建模

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摘要

We propose and discuss a modular technology to reduce the edge-placement-error effect by combining selective etching and alternating-material (dual-material) self-aligned multiple patterning (altSAMP) processes. A geometrical cut-process yield model considering the joint effect of overlay errors, cut-hole, and line CD variations is developed to analyze its patterning performance. In addition to the contributions from the above three process variations, the impacts of key control parameters (such as cut-hole overhang and etching selectivity) on the patterning yield are examined. It is shown that the optimized altSAMP patterning process significantly improves the patterning yield compared with conventional SAMP processes, especially when the half pitch of device patterns is driven down to 7 nm and below. Moreover, the corresponding layout decomposition and synthesis strategy are also discussed. The experimental results of altSAMP process development and material screening are reported.
机译：我们提出并讨论了一种模块化技术，通过组合选择性蚀刻和交​​替材料（双材料）自对准多重图案化（altSAMP）工艺来减少边缘放置误差效应。考虑到覆盖误差，切孔和线CD变化的联合影响，建立了几何切割工艺成品率模型，以分析其构图性能。除了上述三个工艺变化的贡献之外，还检查了关键控制参数（例如，切孔突出和蚀刻选择性）对图案形成率的影响。结果表明，与传统的SAMP工艺相比，优化的altSAMP构图工艺可显着提高构图良率，尤其是在将器件图形的半节距驱动至7 nm以下时更是如此。此外，还讨论了相应的布局分解和综合策略。报告了altSAMP工艺开发和材料筛选的实验结果。

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