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首页> 外文期刊>Journal of nano research >Spectroscopic and Structural Dynamics of MoS_2 Thin Films
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Spectroscopic and Structural Dynamics of MoS_2 Thin Films

机译：MoS_2薄膜的光谱和结构动力学

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摘要

A promising two-dimensional material for applications in optoelectronic and photonics, MoS2 is in focus since last decade. Its optical, structural and electronic properties are of practical importance along with its exciton dynamics. MoS2 thin films were synthesized with Chemical Vapour Deposition (CVD) technique on Si/SiO2 substrates. The thickness dependent regularities were controlled and examined to quantitatively control the film quality with thickness variation. Various characterization techniques were employed to investigate structural and morphological changes induced systematically to reveal the van der waal stacked layers of MoS2 material. The In-plane characteristic mode E-2g(1) and out of plane A(1g) vibrational modes were detected in different configurations of film's structure. Optical absorption spectra gave us information on photon energy with the absorbance; extrapolation of this curve gave optical bandgap (E-g) in the form of Tauc plot. These energies can be associated to interband electronic transitions in the Brillouin zone. The intrinsic excitonic response as a consequence of layer stacking and velly indexing can be attributed to this change in bandgap from 1.68 to 1.91 eV. Surface morphology of the as-grown films also provides better understanding of MoS2 material with root mean square (RMS) roughness in the range of 1.32 to 3.85 nm.
机译：MoS2是一种有前途的二维材料，可用于光电子和光子学领域，自上个十年以来一直是人们关注的焦点。它的光学，结构和电子特性以及激子动力学都具有实际意义。利用化学气相沉积（CVD）技术在Si / SiO2衬底上合成了MoS2薄膜。控制并检查取决于厚度的规则性，以随厚度变化定量控制膜质量。各种表征技术被用来研究系统诱导的结构和形态变化，以揭示MoS2材料的范德华堆叠层。在膜结构的不同构造中检测到面内特征模式E-2g（1）和面外A（1g）振动模式。光学吸收光谱给我们有关光子能量和吸收率的信息。该曲线的外推给出Tauc图形式的光学带隙（E-g）。这些能量可以与布里渊区中的带间电子跃迁相关。层堆叠和平稳索引的结果是固有的激子响应可以归因于这种带隙从1.68 eV到1.91 eV的变化。所生长的薄膜的表面形态还可以更好地了解均方根（RMS）粗糙度在1.32至3.85 nm范围内的MoS2材料。

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