Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer

Vimala P.; Kumar Nithin N. R.

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Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer

机译：高K间隔三栅极MOSFET各种参数的比较分析

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In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with and without Hafnium dioxide as a high-K dielectric material is employed using Silvaco TCAD Atlas Tool. It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows better electrical characteristics in comparison with other device structures.

机译：本文对三栅MOSFET器件的结构进行了比较分析，包括单材料栅（SMG）三栅MOSFET，双材料栅（DMG）三栅MOSFET和三材料栅（TMG）三栅MOSFET使用Silvaco TCAD Atlas Tool可使用含和不含二氧化Ha作为高K介电材料的材料。它为三重材料栅极结构显示了紧凑的模型，并具有更好的DC，AC性能，并为具有高k介电常数的TMG三栅极MOSFET产生了较高的驱动电流，并且与其他器件结构相比，具有更好的电气特性。

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来源
《Journal of nano research》 |2019年第2019期|119-130|共12页
作者
Vimala P.; Kumar Nithin N. R.;
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作者单位

Dayananda Sagar Coll Engn, Dept ECE, Bangalore, Karnataka, India;

Dayananda Sagar Coll Engn, Dept ECE, Bangalore, Karnataka, India;

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原文格式 PDF
正文语种 eng
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关键词
MOSFET; SMG; DMG; TMG Tri-gate MOSFET; Surface Potential; Electric Field; Drain Current; Transconductance; Output Conductance; TCAD;

机译：MOSFET;SMG;DMG;TMG三栅MOSFET;表面电势;电场;漏极电流;跨导;输出电导;TCAD;

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专利

1. Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer [J] . Vimala P., Kumar Nithin N. R. Journal of nano research . 2019,第期

机译：具有高k间隔的三栅MOSFET各种参数的比较分析
2. Modeling and Analysis of a Front High-k gate stack Dual-Material Tri-gate Schottky Barrier Silicon-on-Insulator MOSFET with a Dual-Material Bottom Gate [J] . Banerjee Pritha, Sarkar Subir Kumar Silicon . 2019,第1期

机译：具有双重材料底栅极的前高k门堆双材料三栅肖特基屏障硅皮MOSFET建模与分析
3. A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs [J] . International Journal of Nanoparticles . 2020,第1a2期

机译：双栅极，三栅极和围绕MOSFET的短信效应的比较分析
4. Performance Analysis of a Front High-K Gate Stack Dual-Material Tri-gate SON MOSFET [C] . Pritha Banerjee, Anup Sarkar, Dinesh Kumar Dash, International conference on communication, devices and networking . 2018

机译：前高k门堆栈双型Tri-Gate Son MOSFET的性能分析
5. Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions. [D] . Ashraf, Nabil Shovon. 2011

机译：45 nm栅极长度n-MOSFET陷阱引起的阈值电压波动仿真的比较分析和分析模型预测。
6. Improving visualization and analysis of relationships between neuronal model parameters in discrete parameter spaces [O] . Lisa McKee, Astrid A Prinz, Tomasz G Smolinski 2011

机译：改善离散参数空间中神经元模型参数之间关系的可视化和分析
7. Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures [O] . Ameer F. Roslan, F. Salehuddin, A.S. M. Zain, 2019

机译：比较高k材料栅极间隔物在两个结构之间的DG-FinFET参数变化中的影响

Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer

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