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首页> 外文期刊>Journal of nano research >Capacitive Properties of MIS Structures with SiOx and SixOyNz Films Containing Si Nanoclusters
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Capacitive Properties of MIS Structures with SiOx and SixOyNz Films Containing Si Nanoclusters

机译：含Si纳米团簇的SiOx和SixOyNz薄膜的MIS结构的电容特性

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摘要

The negative differential capacitance has been observed in case of MIS structures with SiOx and SixOyNz films containing Si nanoclusters. It has been shown that the existence of negative differential capacitance depends on a charge state of Si nanoclusters or electron traps in the insulating matrix. In case of SixOyNz films the two peaks have been revealed in C-V characteristics connected with Si nanoclusters and electron traps. The low-temperature annealing of SixOyNz films in hydrogen passivates the electron traps caused by Si dangling bonds and as a result the peak in CV characteristics connected with electron traps disappears. The following low-temperature annealing in vacuum caused some effusion of hydrogen from the film and appearance of electron traps and connected with them capacity shoulder on C-V characteristics.
机译：在具有SiOx和含有Si纳米团簇的SixOyNz膜的MIS结构的情况下，已经观察到负差分电容。已经表明，负差分电容的存在取决于绝缘矩阵中的Si纳米团簇或电子陷阱的电荷状态。对于SixOyNz薄膜，在与硅纳米团簇和电子陷阱相关的C-V特性中已经发现了两个峰。在氢气中对SixOyNz薄膜进行低温退火会使由硅悬空键引起的电子陷阱钝化，结果与电子陷阱相连的CV特性峰消失了。随后在真空中进行的低温退火导致氢从薄膜中渗出，并出现了电子陷阱，并与它们在C-V特性上的承受能力有关。

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