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首页> 外文期刊>Journal of nano research >Fabrication of copper nanowire arrays by electrolytic deposition
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Fabrication of copper nanowire arrays by electrolytic deposition

机译：电解沉积制备铜纳米线阵列

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摘要

Highly ordered copper nanowire arrays were prepared by electrolytic deposition using porous anodic aluminum oxide (AAO) as template. The technique of removing the barrier layer of the AAO template by the pore widening procedure was investigated. The quality of the Au conducting layers sputtered at the bottom side of the AAO template was also studied. The direct current (DC) electrodeposition of copper nanowire arrays was performed efficiently above the Au layer inside the pores. The morphology of the copper nanowires was characterized by scanning electronic microscopy (SEM) and the composition of Cu nanowires was confirmed by energy dispersive X-Ray spectroscopy (EDS). The results showed that the best condition was found to be in phosphoric acid (6%wt) for 10 min to remove the barrier layer completely. Au layer was uniform and dense after sputtering for four times. Copper nanowire arrays were successfully prepared by three-electrode and two-electrode cell electro-deposition, but the nanowire arrays were more ordered by using three-electrode cell and the length of nanowires was more uniform. The diameter of a single Cu nanowire is less than 100 nm with the length up to around 10 mu m, and the nanowires are well arranged in arrays.
机译：通过使用多孔阳极氧化铝（AAO）作为模板的电解沉积制备高度有序的铜纳米线阵列。研究了通过扩孔去除AAO模板的阻挡层的技术。还研究了溅射在AAO模板底部的Au导电层的质量。铜纳米线阵列的直流电（DC）电沉积是在孔内Au层上方有效进行的。铜纳米线的形貌通过扫描电子显微镜（SEM）表征，并且铜纳米线的组成通过能量色散X射线光谱法（EDS）确认。结果表明，最佳条件是在磷酸（6％重量）中浸泡10分钟以完全去除阻挡层。溅射四次后，金层均匀且致密。通过三电极和两电极电池电沉积成功制备了铜纳米线阵列，但使用三电极电池使纳米线阵列更有序，纳米线的长度更均匀。单根铜纳米线的直径小于100 nm，长度可达10微米左右，并且纳米线排列成阵列。

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