...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of nano research >Backside Illumination of an Electronic Photo lonization Detector Realized by UV Transparent Thin Films
【24h】

Backside Illumination of an Electronic Photo lonization Detector Realized by UV Transparent Thin Films

机译：UV透明薄膜实现的电子光电离检测器的背面照明

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

LaB_6/ITO films were prepared by magnetron sputtering technique on borosilicate glass substrates. The transmittance of ITO and LaB_6/ITO films was analyzed by using UV/VIS spectrophotometer, whereby the sheet resistance of the ITO films was measured by four point probes. The effect of temperature and post-annealing processes on ITO film properties optimizing UV transparency and sheet resistance were investigated in detail. ITO films with an optimized thickness of 31 nm exhibited a low sheet resistance of 64 Ω/sq and a high ultraviolet transmittance of 81% at a wavelength of 365 nm. The additional LaB_6 layer controls the UV transmittance behavior of the bilayer structure of LaB_6/ITO by improving the photon absorption with thicker LaB_6 films. The work function of LaB_6 (32 nm)/ITO films with a value of 4.98 eV was measured by ultraviolet photoelectron spectroscopy (UPS).
机译：通过磁控溅射技术在硼硅酸盐玻璃基板上制备LaB_6 / ITO薄膜。使用UV / VIS分光光度计分析ITO和LaB_6 / ITO膜的透射率，从而通过四点探针测量ITO膜的薄层电阻。详细研究了温度和退火后工艺对ITO膜性能的影响，从而优化了UV透明度和薄层电阻。最优化厚度为31 nm的ITO膜在365 nm波长下表现出64Ω/ sq的低薄层电阻和81％的高紫外线透射率。额外的LaB_6层通过使用较厚的LaB_6膜改善光子吸收来控制LaB_6 / ITO双层结构的UV透射行为。通过紫外光电子能谱（UPS）测量了LaB_6（32 nm）/ ITO膜的功函数，其值为4.98 eV。

著录项

  • 来源
    《Journal of nano research》 |2013年第2013期|55-60|共6页
  • 作者

    C.M. Zimmer; C. Asbeck; D. Luetzenkirchen-Hecht; P. Glosekoetter; K.T. Kallis;

  • 作者单位

    Institute of intelligent microsystems, TU Dortmund University, 44227 Dortmund, Germany,Department of Electrical Engineering and CS, University of Applied Sciences Muenster, 48565 Steinfurt, Germany;

    Institute of intelligent microsystems, TU Dortmund University, 44227 Dortmund, Germany;

    Experimental physics of condensed matter, Bergische Universitat Wuppertal, 42097 Wuppertal, Germany;

    Department of Electrical Engineering and CS, University of Applied Sciences Muenster, 48565 Steinfurt, Germany;

    Institute of intelligent microsystems, TU Dortmund University, 44227 Dortmund, Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    PID; transparent conductive thin film; indium tin oxide; lanthanum hexaboride; deep UV transparency;

    机译：PID;透明导电薄膜;氧化铟锡六硼化镧深紫外线透明度;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号