...
首页> 外文期刊>Journal of nano research >Growth and Experimental Evidence of Quantum Confinement Effects in Cu_2O and CuO Thin Films
【24h】

Growth and Experimental Evidence of Quantum Confinement Effects in Cu_2O and CuO Thin Films

机译:Cu_2O和CuO薄膜的生长及量子约束效应的实验证据

获取原文
获取原文并翻译 | 示例
           

摘要

Thin Cu films of thickness 0.4 - 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230℃ and 425℃ in order to produce single-phase Cu_2O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet -visible spectrophotometer. From the absorption spectra of the films, it was found that the gap Eb for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu_2O thinnest film (0.75 nm), whereas the Edirect for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 nm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.
机译:通过射频磁控溅射在Si(100)晶片,康宁玻璃和石英上沉积厚度为0.4-150 nm的薄铜膜。随后,Cu薄膜在230℃和425℃的环境空气中被氧化,从而分别生成单相Cu_2O和CuO。借助于紫外可见分光光度计,以透射几何形状测量所选样品。从薄膜的吸收光谱中,发现偶极允许跃迁的间隙Eb对于最薄的Cu_2O(0.75 nm)薄膜显示约1.2 eV的蓝移,而直接间隙跃迁的Edirect则显示约2.eV的蓝移。 CuO最薄的薄膜(0.7 nm)为0.16 eV。氧化铜半导体中能隙的蓝移表明存在强量子限制效应。

著录项

  • 来源
    《Journal of nano research》 |2011年第2011期|p.69-74|共6页
  • 作者单位

    Engineering Science Department, University of Patras, 26504 Patras, Greece;

    Materials Science Department, University of Patras, 26504 Patras, Greece;

    Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala,Sweden;

    Engineering Science Department, University of Patras, 26504 Patras, Greece;

    Engineering Science Department, University of Patras, 26504 Patras, Greece;

    Engineering Science Department, University of Patras, 26504 Patras, Greece;

    Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX 76019, USA;

    Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX 76019, USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    cu; oxide thin films; quantum confinement effects; optoelectronics; photovoltaics;

    机译:cu;氧化薄膜量子约束效应光电子学光伏;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号