Formation and Characterization of Nanolayered Pd-Based Metal/p-4H SiC Systems with Ohmic Behaviour

Lilyana Kolaklieva; rnRoumen Kakanakov; rnEfstathios Polychroniadis; rnEleni Pavlidou; rnIoannis Tsiaousis; rnBensely Albert; rnAriadne Andreadou

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Formation and Characterization of Nanolayered Pd-Based Metal/p-4H SiC Systems with Ohmic Behaviour

机译：具有欧姆行为的纳米级Pd基金属/ p-4H SiC体系的形成与表征

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Three types of nanolayered Pd-based metal/p-4H SiC systems, Au/Pd, Au/Pd/Al and Au/Pd/Ti/Pd have been investigated and compared to Pd monolayered metallization regarding the electrical and thermal properties. The lowest contact resistivity of 2.8×10~(-5) Ωcm~2 has been achieved with the Au/Pd/Ti/Pd contact. This contact exhibits excellent thermal stability during long-term heating at temperature of 700℃ and at operating temperatures up to 450℃. The surface morphology investigation has shown that despite the observed decrease, the palladium agglomeration has been not avoided completely in the same contact. The dominated surface roughness was measured to be 75 nm. However, the formation of dendrites in certain places leads to increase the surface roughness to 125 nm. The structural analysis revealed that palladium silicides are formed at the interface metal/p-4H SiC which affects on decrease of the barrier height in more than two times and conversion of the contact from Schottky into ohmic.

机译：研究了三种类型的纳米级Pd基金属/ p-4H SiC系统Au / Pd，Au / Pd / Al和Au / Pd / Ti / Pd，并将其与Pd单层金属化在电学和热学性能方面进行了比较。 Au / Pd / Ti / Pd触点的最低接触电阻率为2.8×10〜（-5）Ωcm〜2。该触点在700℃的温度和最高450℃的工作温度下长期加热时具有出色的热稳定性。表面形态研究表明，尽管观察到减少，但是在同一接触中仍不能完全避免钯的团聚。测得的主要表面粗糙度为75nm。但是，在某些地方形成树枝状晶体会导致表面粗糙度增加到125 nm。结构分析表明，在界面金属/ p-4H SiC处形成了硅化钯，影响了两倍以上的势垒高度降低以及肖特基接触转化为欧姆接触。

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来源
《Journal of nano research》 |2010年第2010期|P.77-85|共9页
作者
Lilyana Kolaklieva; rnRoumen Kakanakov; rnEfstathios Polychroniadis; rnEleni Pavlidou; rnIoannis Tsiaousis; rnBensely Albert; rnAriadne Andreadou;
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作者单位

Institute of Applied Physics, Bulgarian Academy of Sciences, Plovdiv, Bulgaria;

rnInstitute of Applied Physics, Bulgarian Academy of Sciences, Plovdiv, Bulgaria;

rnDepartment of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece;

rnDepartment of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece;

rnDepartment of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece;

rnDepartment of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece;

rnDepartment of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece;

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正文语种 eng
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ohmic contacts; contact resistivity; thermal stability; surface morphology; AFM; SEM; TEM;

机译：欧姆接触接触电阻率热稳定性;表面形态原子力显微镜扫描电镜透射电镜;

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6. Nanoscale characterization of electrical transport at metal/3C-SiC interfaces [O] . Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, 2011

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7. Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC [O] . Fashandi, Hossein, Dahlqvist, Martin, Lu, Jun, 2017

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Formation and Characterization of Nanolayered Pd-Based Metal/p-4H SiC Systems with Ohmic Behaviour

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