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首页> 外文期刊>Journal of power electronics >Novel switched-coupled-inductor quasi-Z-source network with enhanced boost capability
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Novel switched-coupled-inductor quasi-Z-source network with enhanced boost capability

机译：具有增强的增强能力的新型开关耦合电感器Quasi-Z源网络

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摘要

In this paper, a novel impedance network referred to as a high-gain switched-coupled-inductor quasi-Z-source network (hgSCL-qZSN) is presented. The proposed topology employs a two-winding switched-coupled-inductor and a switched-capacitor in the impedance network, which offers a higher voltage boost capability when compared to most of the existing ZS-based topologies. In addition, the proposed SCL-qZSN has a low peak magnetizing current, which leads to a smaller core volume. This, in turn, reduces costs as well as core/winding losses. Moreover, to produce higher voltage gains, the presented hgSCL-qZSN requires lower winding turn ratios and shoot-through (ST) ratios, which leads to lower voltage stresses on the passive and active components. A detailed theoretical analysis of the proposed topology is presented in this paper, followed by a number of experimental results.
机译：在本文中，提出了一种新的阻抗网络，称为高增益切换耦合电感器准Z源网络（HGSCL-QZSN）。所提出的拓扑采用两个绕组切换耦合电感器和阻抗网络中的开关电容，其与大多数基于ZS的拓扑相比，提供更高的电压升压能力。另外，所提出的SCL-QZSN具有低峰值磁化电流，这导致芯积较小。反过来，这降低了成本以及核心/绕组损失。此外，为了产生更高的电压增益，所示的HGSCL-QZSN需要较低的绕组转数和射击（ST）比率，这导致无源和有源部件上的较低电压应力。本文提出了对所提出的拓扑的详细理论分析，其次是多种实验结果。

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